Wafer Platform
A platform for supporting a semiconductor wafer includes a body with channel having spaced apart first and second edge margins in contiguous relationship with a top surface of the body. At least one of the edge margins is generally convex along at least a portion of the channel.
1 . A platform for supporting a semiconductor wafer comprising a body having a generally planar top surface sized and shaped for supporting the wafer, and a channel running along the top surface of the body and having a depth extending from the top surface toward the bottom surface of the body, said channel having spaced apart first and second edge margins in contiguous relationship with the top surface of the body, wherein at least one of said edge margins is generally convex along at least a portion of the channel.
2 . The platform set forth in claim 1 wherein both of said first and second edge margins of the channel are generally convex along at least a portion of the channel.
3 . The platform set forth in claim 2 wherein each of said first and second edge margins has a radius of curvature of at least about 0.1 mm along at least a portion of the channel.
4 . The platform as set forth in claim 3 wherein each of said first and second edge margins has a radius of curvature of at least about 0.5 mm along at least a portion of the channel.
5 . The platform as set forth in claim 4 wherein each of said first and second edge margins has a radius of curvature of at least about 0.5 mm along substantially an entirety of the channel.
6 . The platform as set forth in claim 4 wherein each of said first and second edge margins does not extend above the top surface.
7 . The platform as set forth in claim 6 wherein a distance between said first and second edge margins is between about 10 mm to about 15 mm along substantially an entirety of the channel.
8 . The platform as set forth in claim 7 wherein the depth of the channel is about 0.2 mm.
9 . A support ring for supporting a semiconductor wafer in a vertical wafer boat during an annealing process, the support ring comprising a generally ring-shaped body sized and shaped for reception in the vertical wafer boat, the body having a generally planar top surface sized and shaped for supporting the wafer and a bottom surface, and a channel running along the top surface of the body and having a depth extending from the top surface toward the bottom surface of the body, said channel having radially spaced apart inner and outer edge margins in contiguous relationship with the top surface of the body, wherein at least one of said inner and outer edge margins is generally convex.
10 . The support ring as set forth in claim 9 wherein both of said inner and outer edge margins of the channel are generally convex.
11 . The support ring as set forth in claim 10 wherein each of said inner and outer edge margins has a radius of curvature of at least about 0.1 mm.
12 . The support ring as set forth in claim 11 wherein each of said inner and outer edge margins has a radius of curvature of at least about 0.5 mm.
13 . The support ring as set forth in claim 12 wherein each of said first and second edge margins has a radius of curvature of at least about 0.5 mm along substantially an entirety of the channel.
14 . The support ring as set forth in claim 12 wherein each of said first and second edge margins does not extend above the top surface.
15 . The support ring as set forth in claim 12 wherein said channel is arcuate and is generally concentric with said generally ring-shaped body.
16 . The support ring as set forth in claim 15 wherein said generally ring-shaped body includes a radial opening extending from a center opening of the body, said channel having opposite ends extending to the radial opening.
17 . The support ring as set forth in claim 15 wherein said generally ring-shaped body has a diameter of about 300 mm.
18 . The support ring as set forth in claim 9 in combination with the wafer boat, the wafer boat including rails and fingers for supporting the platform, the body having grooves for receiving the fingers.
19 . The support ring as set forth in claim 9 further comprising a silicon oxide layer formed on the top surface of the wafer body.
20 . The support ring as set forth in claim 19 wherein the silicon oxide layer has a thickness of between about 25 nanometers and 5 micrometers.