IP Library Patent Application 12367058
Patent Application
App. No. 12/367,058

CARBON NANOTUBE REINFORCED WIRESAW BEAM USED IN WIRESAW SLICING OF INGOTS INTO WAFERS

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Quick Facts
Patent No.
US None
App. No.
12/367,058
Abstract

A wiresaw beam for use in an apparatus for slicing wafers from an ingot, such as semiconductor wafers from a single crystal ingot or a polycrystalline silicon ingot. The wiresaw beam may be made from a polymer composite material comprising a thermoset polymer resin and carbon nanotubes.

Claims (25)

1 . An apparatus for slicing semiconductor wafers from a single crystal ingot or a polycrystalline ingot comprising:

a wire web for slicing the ingot into wafers; and

a frame including a head for supporting the ingot during slicing, the head comprising an ingot holder and a wiresaw beam constructed from a polymer composite material comprising a thermoset polymer resin and carbon nanotubes.

2 . An apparatus as set forth in claim 1 wherein the thermoset polymer resin is an epoxy resin.

3 . An apparatus as set forth in claim 2 wherein the expoxy resin is selected from the group consisting of a diglycidyl ether of bisphenol A, a diglycidyl ether of bisphenol F, a triglycidyl ether of triphenomethane, a polyglycidyl ether of novolac, a polyglycidyl ether cresol novolac, a polyglycidyl ether of napthalenic phenol, and methyl, ethyl, propyl, butyl substituted versions thereof and mixtures thereof.

4 . An apparatus as set forth in claim 1 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.01% to about 50% by weight.

5 . An apparatus as set forth in claim 1 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.01% to about 3% by weight.

6 . An apparatus as set forth in claim 1 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.1% to about 50% by weight.

7 . An apparatus as set forth in claim 1 wherein the amount of carbon nanotubes in the wiresaw beam is from about 1% to about 50% by weight.

8 . An assembly for use in an apparatus for slicing semiconductor wafers from a single crystal ingot or a polycrystalline ingot, the assembly comprising:

an ingot holder; and

a wiresaw beam constructed from a polymer composite material comprising a thermoset polymer resin and carbon nanotubes.

9 . An assembly as set forth in claim 8 wherein the thermoset polymer resin is an epoxy resin.

10 . An assembly as set forth in claim 9 wherein the expoxy resin is selected from the group consisting of a diglycidyl ether of bisphenol A, a diglycidyl ether of bisphenol F, a triglycidyl ether of triphenomethane, a polyglycidyl ether of novolac, a polyglycidyl ether cresol novolac, a polyglycidyl ether of napthalenic phenol, and methyl, ethyl, propyl, butyl substituted versions thereof and mixtures thereof.

11 . An assembly as set forth in claim 8 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.01% to about 50% by weight.

12 . An assembly as set forth in claim 8 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.01% to about 3% by weight.

13 . An assembly as set forth in claim 8 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.1% to about 50% by weight.

14 . An assembly as set forth in claim 8 wherein the amount of carbon nanotubes in the wiresaw beam is from about 1% to about 50% by weight.

15 . A wiresaw beam for use with a wiresaw for slicing semiconductor wafers from a single crystal ingot or a polycrystalline ingot, wherein the wiresaw beam is constructed from a polymer composite material comprising a thermoset polymer resin and carbon nanotubes.

16 . A wiresaw beam as set forth in claim 15 wherein the thermoset polymer resin is an epoxy resin.

17 . A wiresaw beam as set forth in claim 16 wherein the expoxy resin is selected from the group consisting of a diglycidyl ether of bisphenol A, a diglycidyl ether of bisphenol F, a triglycidyl ether of triphenomethane, a polyglycidyl ether of novolac, a polyglycidyl ether cresol novolac, a polyglycidyl ether of napthalenic phenol, and methyl, ethyl, propyl, butyl substituted versions thereof and mixtures thereof.

18 . A wiresaw beam as set forth in claim 15 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.01% to about 50% by weight.

19 . A wiresaw beam as set forth in claim 15 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.01% to about 3% by weight.

20 . A wiresaw beam as set forth in claim 15 wherein the amount of carbon nanotubes in the wiresaw beam is from about 0.1% to about 50% by weight.

21 . A wiresaw beam as set forth in claim 15 wherein the amount of carbon nanotubes in the wiresaw beam is from about 1% to about 50% by weight.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: BANK OF AMERICA, N.A.
To: ENFLEX CORPORATION; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0031 →
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
SECURITY AGREEMENT Recorded Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
SECURITY AGREEMENT Recorded Apr 1, 2011
From: MEMC ELECTRONIC MATERIALS, INC.; SUNEDISON LLC; SOLAICX
To: BANK OF AMERICA, N.A.
Reel/Frame 026064/0720 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2009
From: GUPTA, PUNEET
To: MEMC ELECTRONIC MATERIALS, INC.
Reel/Frame 022420/0920 →