Flash memory device and method for fabricating the same

1. A flash memory device comprising:

a coupling oxide layer formed over an active area of a semiconductor substrate;

a first control gate formed over the coupling oxide layer; and

a second control gate formed over and enclosing lateral sidewalls of the coupling oxide layer and the first control gate.

2. The flash memory device of claim 1 , wherein the first control gate has a stepped portion at lateral sides thereof.

3. The flash memory device of claim 1 , further comprising a thermal oxide layer formed over the coupling oxide layer and the first control gate.

4. The flash memory device of claim 1 , wherein the coupling oxide layer comprises a tunneling oxide layer.

5. The flash memory device of claim 1 , wherein a portion of the coupling oxide layer contacts a lower surface of the second control gate such that the portion serves as a tunneling oxide layer.

6. A method for fabricating a flash memory device comprising:

forming a coupling oxide layer over an active area of a semiconductor substrate; and then

forming a first control gate over the coupling oxide layer; and then

forming a second control gate over and enclosing sidewalls of the coupling oxide layer and the first control gate.

7. The fabricating method of claim 6 , wherein forming the first control gate comprises:

sequentially forming a first polysilicon layer and a first nitride layer over the semiconductor substrate including the coupling oxide layer; and then

patterning the first nitride layer to form forming a first nitride layer pattern having a width smaller than the width of the coupling oxide layer; and then

selectively removing the first polysilicon layer by a predetermined thickness using the first nitride layer pattern as a mask to thereby form the first control gate having a stepped portion at lateral sides thereof.

8. The fabricating method of claim 7 , further comprising:

forming a nitride spacer at lateral sidewalls of the first nitride layer pattern and lateral sidewalls of the first polysilicon layer.

9. The fabricating method of claim 8 , wherein forming the nitride spacer comprises:

forming a second nitride layer on the whole surface of the semiconductor substrate; and then

performing an etching process on the second nitride layer.

10. The fabricating method of claim 9 , further comprising:

performing a second etching process using the first nitride layer pattern and the nitride spacer as masks; and then

removing the first nitride layer pattern and the nitride spacer.

11. The fabricating method of claim 10 , further comprising:

performing a thermal oxidation process with respect to the whole surface of the semiconductor substrate including the coupling oxide layer pattern and the first control gate.

12. The fabricating method of claim 6 , wherein forming the second control gate comprises:

forming a second polysilicon layer on the whole surface of the semiconductor substrate including the first control gate; and then

selectively removing the second polysilicon layer to thereby form the second control gate in the form of a sidewall enclosing lateral sidewalls of the coupling oxide layer pattern and the first control gate.

13. The fabricating method of claim 12 , further comprising:

forming a sidewall spacer at both sidewalls of the second control gate.

14. A method comprising:

forming an oxide layer pattern in an active area of a semiconductor substrate; and then

sequentially forming a first polysilicon layer and a first nitride layer over the semiconductor including oxide layer pattern; and then

forming a first nitride layer pattern over the oxide layer pattern and a second nitride layer pattern spaced part from the first nitride layer pattern by patterning the first nitride layer; and then

forming stepped portions on portions of the first polysilicon layer formed over the oxide layer pattern by selectively removing the first polysilicon layer using the first and second nitride layer patterns as masks; and then

forming a first control gate interposed between the first nitride layer pattern and the oxide layer pattern after forming the nitride spacer; and then

forming a gate oxide layer over the control gate and on sidewalls of the control gate; and then

forming a second control gate at sidewall of the first control gate; and then

forming a sidewall spacer on sidewalls of the second control gate.

15. The method of claim 14 , wherein the first nitride layer pattern has a width smaller than the width of the oxide layer pattern.

16. The method of claim 14 , further comprising, before forming the control gate and after forming the forming stepped portions:

forming nitride spacers on the stepped portions of the first polysilicon layer and at sidewalls of the first nitride layer patterns, respectively.

17. The method of claim 16 , wherein forming the nitride spacer comprises:

forming a second nitride layer over the whole surface of the semiconductor substrate including the first and second nitride layer patterns and the first polysilicon layer; and then

performing an anisotropic etching process on the second nitride layer.

18. The method of claim 17 , wherein forming the first control gate comprises:

performing an etching process on the first polysilicon layer using the first and second nitride layer patterns and the nitride layer spacers as masks; and then

removing the first and second nitride layer patterns and the nitride spacers.

19. The method of claim 14 , wherein the control gate comprises a first control gate portion having a first thickness and a first width and a second control gate portion having a second thickness greater than the first thickness and a second width less than the first width.

20. The method of claim 19 , wherein the first width is the same as the width of the oxide layer pattern.