Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)≧400.
1. A semiconductor device, comprising:
a chip which has a pad;
a bump electrode formed over the pad; and
a wire whose stitch bonding is made over the bump electrode;
wherein the wire satisfies a condition:
(modulus-of-elasticity/breaking strength per unit area)≧400.
2. A semiconductor device according to claim 1 , further comprising:
sealing resin which seals the chip, the bump electrode, and the wire; wherein as for the sealing resin, spiral flow is 110 cm or more, and viscosity is less than 10 Pa·S.