Semiconductor device having a through electrode, semiconductor module employing thereof and method for manufacturing semiconductor device having a through electrode
View Patent ↗The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes 103 extending through the silicon substrate 101 is provided. An insulating film 105 is buried within the through hole 103 . A plurality of columnar through plugs 107 are provided in the insulating film 105.
1. A method for manufacturing a semiconductor device, comprising:
providing a first hole in one surface of a semiconductor substrate;
providing an insulating film to fill said first hole;
providing a plurality of second holes in said insulating film, said second holes extending from said one surface;
forming a plurality of first electrically conducting films to fill the respective second holes;
removing a portion of said semiconductor substrate at the other surface thereof to reduce a thickness of said semiconductor substrate; and exposing said first electrically conducting films.
2. The method according to claim 1 , wherein:
said insulating film is composed of a photosensitive material, and said providing a plurality of said second holes includes selectively irradiating with ultraviolet a predetermined region of said photosensitive material.
3. A method for manufacturing a semiconductor device, comprising:
providing a first hole in one surface of a semiconductor substrate to provide a remaining portion of said semiconductor substrate inside said first hole;
providing an insulating film to fill said first hole;
providing a plurality of second holes in said remaining portion of said semiconductor substrate, said second holes extending from said one surface;
forming a plurality of first electrically conducting films to fill the respective second holes;
removing a portion of said semiconductor substrate at the other surface thereof to reduce a thickness of said semiconductor substrate; and
exposing said first electrically conducting film.
4. The method according to claim 1 , further comprising forming a second electrically conducting film along an inside wall of said
first hole before said providing an insulating film, wherein said forming a plurality of first electrically conducting films includes:
exposing said second electrically conducting film on a bottom of said first hole by conducting an anisotropic etching to selectively remove the insulating film on said bottom of said first hole; and growing said first electrically conducting film from said second electrically conducting film exposed on said bottom by a plating process.
5. The method according to claim 1 , wherein:
said first hole extends through said semiconductor substrate; said plurality of first electrically conducting films constitutes a plurality of columnar electrically conducting plugs, and said insulating film is interposed between a side wall of said first hole and said plurality of columnar electrically conducting plugs, and between each adjacent pair of said plurality of columnar electrically conducting plugs.
6. The method according to claim 5 , wherein at least one of said plurality of electrically conducting plugs is buried in said insulating film with an entirety of a longitudinal periphery thereof being directly in contact with said insulating film.