Cyclopentene As A Precursor For Carbon-Based Films
The present invention provides a method for forming an amorphous carbon layer on a substrate. The method comprises the steps of: positioning the substrate in a processing chamber; introducing a process gas into the processing chamber, wherein the process gas comprises a composition comprising a C 4 to C 10 cyclic hydrocarbon having a single carbon-carbon double bond, wherein the composition is free of a stabilizer; generating a plasma of the process gas; and depositing an amorphous carbon layer on the substrate.
1 . A method for forming an amorphous carbon layer on a substrate, the method comprising the steps of:
positioning the substrate in a processing chamber;
introducing a process gas into the processing chamber, wherein the process gas comprises a composition comprising cyclopentene, wherein the composition is free of a stabilizer;
generating a plasma of the process gas; and
depositing an amorphous carbon layer on the substrate.
2 . The method of claim 1 wherein the process gas further comprises an inert gas.
3 . The method of claim 1 wherein the process gas further comprises a nitrogen-containing gas.
4 . The method of claim 3 wherein the nitrogen-containing gas comprises nitrogen or ammonia.
5 . The method of claim 1 wherein the process gas further comprises hydrogen gas.
6 . The method of claim 1 wherein the process gas further comprises an oxidizing gas.
7 . The method of claim 1 wherein the process gas further comprises fluorine gas.
8 . A method for forming an amorphous carbon layer on a substrate, the method comprising the steps of:
positioning the substrate in a processing chamber;
vaporizing liquid cyclopentene from a vessel to form at least one component of a process gas;
introducing the process gas into the processing chamber;
generating a plasma of the process gas; and
depositing an amorphous carbon layer on the substrate.
9 . The method of claim 8 wherein the process gas further comprises an inert gas.
10 . The method of claim 8 wherein the process gas further comprises a nitrogen-containing gas.
11 . The method of claim 10 wherein the nitrogen-containing gas comprises nitrogen or ammonia.
12 . The method of claim 8 wherein the process gas further comprises hydrogen gas.
13 . The method of claim 8 wherein the process gas further comprises an oxidizing gas.
14 . The method of claim 8 wherein the process gas further comprises fluorine gas.
15 . A method for forming an amorphous carbon layer on a substrate, the method comprising the steps of:
positioning the substrate in a processing chamber;
introducing a process gas into the processing chamber, wherein the process gas comprises a composition comprising a C 4 to C 10 cyclic hydrocarbon having a single carbon-carbon double bond, wherein the composition is free of a stabilizer;
generating a plasma of the process gas; and
depositing an amorphous carbon layer on the substrate.
16 . The method of claim 15 wherein the C 4 to C 10 cyclic hydrocarbon is selected from the group consisting of: cyclobutene, cyclopentene, cyclohexene, cycloheptene, cyclooctene, cyclononene, cyclodecene, and mixtures thereof.
17 . The method of claim 16 wherein the C 4 to C 10 cyclic hydrocarbon is cyclopentene.