Semiconductor device and a fabrication process thereof
View Patent ↗A semiconductor device formed by the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitride on the bottom part and a sidewall surface of the contact hole with a conformal shape to the bottom part and the sidewall surface of the contact hole, forming a tungsten layer so as to fill the contact hole via the barrier metal film, and forming a tungsten plug in the contact hole by the tungsten layer by polishing away a part of the tungsten film on the insulation film until a surface of the insulation film is exposed, wherein there is conducted a step of cleaning a surface of the conductor body prior to the forming step of the barrier metal film.
1. A semiconductor device having a contact structure, said contact structure comprising:
a conductor body;
an insulation film covering said conductor body;
a contact hole penetrating through said insulation film and exposing said conductor body; and
a contact plug filling said contact hole and contacting with said conductor body electrically at a bottom part of said contact hole,
wherein said conductor body comprises a silicide film,
said contact plug comprising a barrier metal film of tungsten nitride extending along a sidewall surface and a bottom surface of said contact hole and a tungsten plug formed over said barrier metal film to fill said contact hole,
said barrier metal film having a concentration gradient that decreases a nitrogen concentration with increasing distance from said sidewall surface of said contact hole, and
said barrier metal film contacting with said conductor body directly and intimately at a depressed part formed over a surface of said conductor body with a depth of 5-8 nm.
2. The semiconductor device as claimed in claim 1 , wherein said semiconductor device has a gate length of 60 nm or less.
3. The semiconductor device as claimed in claim 1 , wherein said semiconductor has a diffusion region having a junction depth of 100 nm or less, and wherein said conductor body comprises a silicide film formed on a surface of said diffusion region.