Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a first damaged region in a first single-crystal semiconductor substrate;
bonding the first single-crystal semiconductor substrate and a substrate having an insulating surface with a bonding layer interposed therebetween;
separating the first single-crystal semiconductor substrate, so that a first single-crystal semiconductor layer is left over the substrate having the insulating surface;
forming a first gate insulating layer over the first single-crystal semiconductor layer;
forming a gate electrode over the first gate insulating layer, wherein the gate electrode overlaps the first single-crystal semiconductor layer;
forming a first interlayer insulating layer over the gate electrode;
planarizing an upper surface of the first interlayer insulating layer;
forming a second gate insulating layer over the gate electrode and the first interlayer insulating layer;
forming a second damaged region in a second single-crystal semiconductor substrate;
bonding the second single-crystal semiconductor substrate and the substrate having the insulating surface with the second gate insulating layer interposed therebetween;
separating the second single-crystal semiconductor substrate, so that a second single-crystal semiconductor layer is left over the second gate insulating layer, wherein the second single-crystal semiconductor layer overlaps the gate electrode and the first single-crystal semiconductor layer,
wherein the gate electrode is in contact with the second gate insulating layer, and
wherein the second gate insulating layer is in contact with the second single-crystal semiconductor layer.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the first damaged region is formed by irradiating the first single-crystal semiconductor substrate with first ions, and wherein the second damaged region is formed by irradiating the second single-crystal semiconductor substrate with second ions.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method with the use of organic silane gas.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the first interlayer insulating layer includes an organic insulating material.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein a complementary circuit is formed of a first transistor including the first single-crystal semiconductor layer and a second transistor including the second single-crystal semiconductor layer.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein the gate electrode is exposed by planarizing the upper surface of the first interlayer insulating layer.