Delay time adjusting method of semiconductor integrated circuit

1. A manufacturing method of a semiconductor integrated circuit, said method comprising:

storing a relation between a plurality of sizes and a plurality of voltage values in a relation table, as tangibly embodied in a machine-readable storage medium on a computer;

forming a plurality of macros on a chip, wherein each of the plurality of macros includes a transistor and a setting voltage generation circuit designed to apply a setting voltage to the transistor;

generating a process data indicating a size of the transistor of each of the plurality of macros, using a measurement device that provides output data as input data to the computer;

selecting, using a processor on the computer, a voltage value corresponding to the size of the transistor of each of the plurality of macros indicated in the process data from the plurality of voltage values as an optimum voltage value which is related to the size in the relation table; and

setting the setting voltage of the setting voltage generation circuit of each of the plurality of macros to the optimum voltage value, using a delay adjustment device controlled by the computer.

2. The manufacturing method according to claim 1 , wherein the size is comprises a size of a gate of the transistor of each of the plurality of macros formed on the chip.

3. The manufacturing method according to claim 1 , wherein the size is comprises information indicating at least one of a size of a mask of a gate of the transistor, a size of a gate of the transistor after a photoresist mask is formed and before an etching process, and a size of a gate of the transistor after the etching process of the transistor.

4. The manufacturing method according to claim 1 , wherein the transistor is formed on a semiconductor substrate formed on the chip, and

the setting voltage comprises information indicating at least one of a bias voltage applied to the semiconductor substrate, a supply voltage applied to a drain or a source of the transistor, and a supply voltage applied to a gate of the transistor for switching of the gate.

5. The manufacturing method according to claim 1 , wherein the setting voltage generation circuit includes a storage device for registering the setting voltage.

6. The manufacturing method according to claim 5 , wherein the storing device includes a fuse circuit for storing the setting voltage.

7. The manufacturing method according to claim 1 , wherein the process data includes position information indicating a position of the transistor of each of the plurality of macros on the chip, and

the selecting includes:

generating voltage-position correspondence data indicating a relation between the position information of each of the plurality of macros and the optimum voltage value selected by the selecting; and

generating integrated voltage-position correspondence data indicating a relation between the position information and the optimum voltage value of each of the plurality of macros which are represented in the voltage-position correspondence data, and setting voltage generation circuit position information indicating a position of the setting voltage generation circuit on the chip, and

the setting includes:

setting the setting voltage of the setting voltage generation circuit of each of the plurality of macros to the optimum voltage value based on the integrated voltage-position correspondence data.

8. The manufacturing method according to claim 7 , wherein layout data indicating a layout of the plurality of macros is stored in a storage device, and

the forming includes:

forming the plurality of macros on the chip based on the layout data, and

the selecting includes:

obtaining a position of the setting voltage generation circuit of each of the macros by searching the layout data stored in the storage device.

9. A delay time adjustment method for adjusting a delay time of a transistor, applied to a semiconductor integrated circuit including a plurality of macros formed on a chip, the transistor and a setting voltage generation circuit designed to apply a setting voltage to the transistor being included in each of the plurality of macros, wherein the method comprises:

storing a plurality of sizes and a plurality of voltage values which are related to each other in a relation table, as tangibly embodied on a machine-readable storage device on a computer;

generating process data indicating a size of the transistor of a plurality of macros on the chip, using a measurement device that supplies data to the computer;

selecting, using a processor on the computer, a voltage value corresponding to the size of each of the plurality of macros indicated in the process data from the plurality of voltage values as an optimum voltage value which is related to the size in the relation table; and

setting the setting voltage of the setting voltage generation circuit of each of the plurality of macros to the optimum voltage value, using a delay adjustment device controlled by the computer.

10. The delay time adjustment method according to claim 9 , wherein the size comprises a size of a gate of the transistor of each of the plurality of macros on the chip.

11. The delay time adjustment method according to claim 9 , wherein the size comprises information including at least one of a size of a mask of a gate of the transistor, a size of a gate of the transistor after a photoresist mask is formed and before an etching process, and a size of a gate of the transistor after etching process of the transistor.

12. The delay time adjustment method according to claim 9 , wherein the transistor is formed on a semiconductor substrate formed on the chip, and

the setting voltage comprises information indicating at least one of a bias voltage applied to the semiconductor substrate, a supply voltage applied to a drain or a source of the transistor, and a supply voltage applied to a gate of the transistor for switching of the gate.

13. The delay time adjustment method according to claim 9 , wherein the setting voltage generation circuit includes a storage device for registering the setting voltage.

14. The delay time adjustment method according to claim 13 , wherein the storing device includes a fuse circuit for storing the setting voltage.

15. The delay time adjustment method according to claim 9 , wherein the process data includes position information indicating a position of the transistor of each of the plurality of macros on the chip, and

the selecting includes:

generating voltage-position correspondence data indicating a relation between the position information of each of the plurality of macros and the optimum voltage value selected by the selecting; and

generating integrated voltage-position correspondence data indicating a relation between the position information and the optimum voltage value of each of the plurality of macros which are represented in the voltage-position correspondence data, and setting voltage generation circuit position information indicating a position of the setting voltage generation circuit on the chip, and

the setting includes:

setting the setting voltage of the setting voltage generation circuit of each of the plurality of macros to the optimum voltage value based on the integrated voltage-position correspondence data.

16. The delay time adjustment method according to claim 15 , wherein layout data indicating a layout of the plurality of macros is stored in a storage device, and the selecting includes:

obtaining a position of the setting voltage generation circuit of each of the macros by searching the layout data stored in the storage device.

17. A delay time adjustment device for adjusting a delay time of a transistor, applied to a system including:

a semiconductor integrated circuit including a plurality of macros formed on a chip, the transistor and a setting voltage generation circuit designed to apply a setting voltage to the transistor being included in each of the plurality of macros; and

measurement equipment configured to generate process data indicating a size of the transistor and store the process data in a storage device, wherein the device comprises:

a relation table, tangibly embodied in a memory device, configured to store a relation between a plurality of sizes and a plurality of voltage values;

an optimum voltage selection section configured to select a voltage value corresponding to the size of the transistor of each of the plurality of macros indicated in the process data from the plurality of voltage values as an optimum voltage value by referring the relation table; and

an optimum voltage set section configured to set the setting voltage of the setting voltage generation circuit of each of the plurality of macros to the optimum voltage value.

18. The delay time adjustment device according to claim 17 , wherein the size comprises a size of a gate of the transistor of each of the plurality of macros formed on the chip.

19. The delay time adjustment device according to claim 18 , wherein the size comprises information indicating at least one of a size of a mask of a gate of the transistor, a size of a gate of the transistor after a photoresist mask is formed and before an etching process, and a size of a gate of the transistor after etching process of the transistor.

20. The delay time adjustment device according to claim 17 , wherein the transistor is formed on a semiconductor substrate formed on the chip, and

the setting voltage comprises information indicating at least one of a bias voltage applied to the semiconductor substrate, a supply voltage applied to a drain or a source of the transistor, and a supply voltage applied to a gate of the transistor for switching of the gate.

21. The delay time adjustment device according to claim 17 , wherein the process data includes position information indicating a position of the transistor of each of the plurality of macros on the chip, and

the optimum voltage selection section includes:

a data generation section configured to generate voltage-position correspondence data indicating a relation between the position information of each of the plurality of macros and the optimum voltage value selected by the selecting; and

an integrated data generation section configured to generate integrated voltage-position correspondence data indicating a relation between the position information and the optimum voltage value of each of the plurality of macros which are represented in the voltage-position correspondence data, and setting voltage generation circuit position information indicating a position of the setting voltage generation circuit on the chip, and

the optimum voltage set section sets setting voltage of the setting voltage generation circuit of each of the plurality of macros to the optimum voltage value based on the integrated voltage-position correspondence data.

22. The delay time adjustment device according to claim 21 , wherein layout data indicating a layout of the plurality of macros is stored in the storage device, and the optimum voltage selection section includes:

a circuit position obtainment section configured to obtain a position of the setting voltage generation circuit of each of the macros by searching the layout data stored in the storage device.