Low temperature impurity doping of silicon carbide
The method described herein enables the introduction of external impurities into Silicon Carbide (SiC) to be conducted at a temperature between 1150-1400° C. Advantages include: a) low temperature diffusion procedure with greater control of the doping process, b) prevent roughness of SiC surface, c) less surface defects and d) better device performance and higher yield. The method described herein involves depositing a ceramic layer that contains the desired impurity and a certain element such as oxygen (in the form of oxide), or other elements/compounds that draw out the silicon and carbon atoms from the surface region of the SiC leaving behind carbon and silicon vacancies which then allow the external impurity to diffuse into the SiC more easily. In another embodiment, the deposited layer also has carbon atoms that discourage carbon from escaping from the SiC, thus generating a surface region of excess carbon in addition to the silicon vacancies.
1. An n-type silicon carbide semiconductor in which a group V element is used as donor impurity in a silicon carbide substrate, the n-type silicon carbide semiconductor formed by depositing a layer on a silicon carbide material, the layer including a group V impurity and an oxide, the layer and the silicon carbide material forming a sample heated at a first temperature forming one or more vacancies in the silicon carbide substrate and heated at a second temperature, thereby forming a twice-heated sample.
2. The semiconductor of claim 1 wherein depositing is selected from the group consisting of dipping, spinning, brushing and dropping droplets with a dropper.
3. The semiconductor of claim 1 wherein the layer comprises phosphorus oxide.
4. The semiconductor of claim 1 wherein the first temperature is approximately 650° C.-1000° C.
5. The semiconductor of claim 1 wherein the second temperature is above 1000° C. and below the decomposition temperature of a surface of the layer.
6. The semiconductor of claim 1 wherein the sample is dried.
7. The semiconductor of claim 1 wherein the deposited layer is removed from the sample, upon the sample cooling.
8. The semiconductor of claim 7 wherein the deposited layer is removed by etching in a solution of hydrofluoric acid in water.
9. The semiconductor of claim 1 , wherein the phosphorus impurity fills the one or more vacancies in the silicon carbide substrate at the second temperature.
10. The semiconductor of claim 1 , wherein the one or more vacancies are formed in a thermodynamic energy favorable reaction.
11. The semiconductor of claim 1 , wherein the layer comprises an element that is able to form a chemical bond with silicon with a formation energy lower than that of the bonding between silicon and carbon atoms in a surface region of silicon carbide.
12. The semiconductor of claim 1 , wherein the layer comprises an element that is able to bond with a carbon atom with a formation energy lower than that of the bonding between silicon and carbon in a surface region of silicon carbide.
13. A p-type silicon carbide semiconductor in which a group III element is used as an acceptor impurity in a silicon carbide substrate, the p-type silicon carbide semiconductor formed by depositing a layer on a silicon carbide material, the layer including an impurity selected from the group consisting of the group III impurity, and an oxide, the layer and the silicon carbide material forming a sample heated at a first temperature forming one or more vacancies in the silicon carbide substrate and heated at a second temperature, thereby forming a twice-heated sample.
14. The semiconductor of claim 13 wherein the layer comprises a boron impurity.
15. The semiconductor of claim 13 wherein the layer comprises boron oxide.
16. The semiconductor of claim 13 wherein the layer comprises an element that is able to form a chemical bond with silicon with a formation energy lower than that of the bonding between silicon and carbon atoms in a surface region of silicon carbide.
17. The semiconductor of claim 16 , wherein the element comprise a metal.
18. The semiconductor of claim 13 wherein the first temperature is approximately 650° C.-1000° C.
19. The semiconductor of claim 13 wherein the second temperature is above 1000° C. and below the decomposition temperature of a surface of the layer.
20. The semiconductor of claim 13 wherein the layer comprises an element that is able to bond with a carbon atom with a formation energy lower than that of the bonding between silicon and carbon in a surface region of silicon carbide.
21. The semiconductor of claim 20 , wherein the element comprise a metal.
22. The semiconductor of claim 1 , wherein the silicon carbide material forms a Si—O bond at the first temperature.
23. The semiconductor of claim 22 , wherein the oxygen of Si—O is from the oxide.
24. The semiconductor of claim 13 , wherein the one or more vacancies are formed in a thermodynamic energy favorable reaction.