Process of making a bulk acoustic wave structure with an aluminum copper nitride piezoelectric layer
View Patent ↗According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer.
1. A method of forming a BAW structure, the method comprising:
forming a lower electrode over a substrate;
forming a piezoelectric layer over said lower electrode, said piezoelectric layer comprising aluminum copper nitride; and
forming an upper electrode over said piezoelectric layer.
2. The method of claim 1 , further comprising forming a bond pad connected to said upper electrode, wherein said bond pad and said piezoelectric layer are formed in a same process chamber.
3. The method of claim 2 , wherein said bond pad comprises aluminum copper.
4. The method of claim 1 , wherein said lower electrode comprises a high conductivity metal layer underlying a high density metal layer, wherein said high conductivity metal layer and said piezoelectric layer are formed in a same process chamber.
5. The method of claim 1 , wherein said upper electrode comprises a high conductivity metal layer overlying a high density metal layer, wherein said high conductivity metal layer and said piezoelectric layer are formed in a same process chamber.
6. The method of claim 1 , wherein said piezoelectric layer is formed in a process chamber utilizing an aluminum copper target comprising between 0.2 percent copper and 5.0 percent copper.
7. A method of forming a BAW structure, the method comprising:
forming a lower electrode over a substrate;
forming a piezoelectric layer over the lower electrode, the piezoelectric layer including aluminum copper nitride; and
forming an upper electrode over the piezoelectric layer,
at least one of the lower electrode and the upper electrode includes an AlCu layer formed in a same process chamber as the piezoelectric layer.
8. The method of claim 7 , wherein the process chamber includes an AlCu target used to form the piezoelectric layer and the at least one of the lower electrode and the upper electrode.
9. The method of claim 8 , wherein the AlCu target includes between 0.2 and 5.0 percent Cu.
10. The method of claim 8 , further comprising cleaning and seasoning the AlCu target after said forming the piezoelectric layer.
11. The method of claim 7 , wherein the upper electrode includes the AlCu layer.
12. The method of claim 7 , wherein the lower electrode includes the AlCu layer.
13. The method of claim 7 , wherein both the lower and upper electrodes include the AlCu layer.
14. The method of claim 7 , further comprising forming a bond pad connected to the upper electrode, wherein the bond pad includes another AlCu layer also formed in the same process chamber.
15. A method of forming a BAW structure, the method comprising:
forming a lower electrode over a substrate, the lower electrode including a first high density metal layer over a first high conductivity metal layer;
forming a piezoelectric layer over said lower electrode, the piezoelectric layer including aluminum copper nitride;
forming an upper electrode over said piezoelectric layer, the upper electrode including a second high conductivity metal layer over a second high density metal layer; and
forming a bond pad over the piezoelectric layer and the upper electrode,
wherein the first and second high conductivity metal layers and the bond pad are AlCu layers formed in a same process chamber as the piezoelectric layer using an AlCu target.
16. The method of claim 15 , wherein the AlCu target includes between 0.2 and 5.0 percent Cu.
17. The method of claim 15 , further comprising cleaning and seasoning the AlCu target after said forming the piezoelectric layer.