Semiconductor module, and hybrid vehicle drive device including the same
A bus bar constitutes a power line and another bus bar constitutes an earth line. The bus bars are layered in the normal direction of an insulating substrate via an insulating member. Here, the bus bar positioned at the upper side is formed by a metal member and the bus bar positioned at the lower side is formed by a wiring layer formed on the insulating substrate. Since one of the bus bars is the wiring layer fixed to the insulating substrate, it is possible to assure heat radiation of the bus bar. Thus, it is possible to make the bus bar a wiring layer having a comparatively small cross sectional area and reduce the semiconductor module size in the normal direction. By mounting the semiconductor module on the drive device for a hybrid vehicle, it is possible to reduce the vertical-direction size when mounted on the vehicle and lower the position of the center of gravity of the vehicle to improve the running stability.
1. A semiconductor module comprising:
a first power supply line connected to a first electrode of a power supply;
a second power supply line connected to a second electrode of said power supply;
first and second switching elements connected between said first power supply line and said second power supply line; and
an insulating substrate having said first and second switching elements mounted thereon;
wherein:
said first power supply line includes a bus bar coupled to a first electrode layer of said first switching element,
said second power supply line includes a wiring layer disposed on said insulating substrate and coupled to a second electrode layer of said second switching element, and
said wiring layer and said bus bar are laminated in the normal direction of said insulating substrate.
2. The semiconductor module according to claim 1 , further comprising:
a signal line layer disposed on said insulating substrate to transmit a control signal to control electrodes of said first and second switching elements;
a first conductor member bringing said first power supply line, said first and second switching elements and said second power supply line into electrical conduction; and
a second conductor member bringing the control electrodes of said first and second switching elements and said signal line layer into electrical conduction, wherein
said signal line layer is disposed such that an extending direction of said first conductor member is substantially perpendicular to an extending direction of said second conductor member.
3. The semiconductor module according to claim 2 , wherein
said first electrode layer and said second electrode layer are disposed such that a direction of a current passing through said first switching element is opposite to a direction of a current passing through said second switching element.
4. The semiconductor module according to claim 1 , further comprising
a heat radiation member attached to a bottom side of said insulating substrate.
5. A drive device for a hybrid vehicle, comprising:
a damper coupled with a crank shaft of an internal combustion engine;
a rotating electric machine disposed so as to have an axis of rotation aligned with an axis of rotation of said damper;
a power transfer mechanism transferring, to a driving shaft, a combination of mechanical power generated by said internal combustion engine with mechanical power generated by said rotating electric machine;
a case housing said damper, said rotating electric machine and said power transfer mechanism; and
a power control unit including a semiconductor module and controlling said rotating electric machine, wherein
said semiconductor module includes:
a first power supply line connected to a first electrode of a power supply;
a second power supply line connected to a second electrode of said power supply;
first and second switching elements connected between said first power supply line and said second power supply line; and
an insulating substrate having said first and second switching elements mounted thereon,
said first power supply line includes a bus bar coupled to a first electrode layer of said first switching element, and said second power supply line includes a wiring layer disposed on said insulating substrate and coupled to a second electrode layer of said second switching element, and
said power control unit is, when being projected in a direction of said axis of rotation, disposed in said case so as to fall within a horizontal dimension of a projected portion of said case, that houses said damper, said rotating electric machine and said power transfer mechanism, upon installation on the vehicle.
6. The drive device according to claim 5 , wherein
said semiconductor module further includes:
a signal line layer disposed on said insulating substrate to transmit a control signal to control electrodes of said first and second switching elements;
a first conductor member bringing said first power supply line, said first and second switching elements and said second power supply line into electrical conduction; and
a second conductor member bringing the control electrodes of said first and second switching elements and said signal line layer into electrical conduction, and
said signal line layer is disposed such that an extending direction of said first conductor member is substantially perpendicular to an extending direction of said second conductor member.
7. The drive device according to claim 6 , wherein
said first electrode layer and said second electrode layer are disposed such that a direction of a current passing through said first switching element is opposite to a direction of a current passing through said second switching element.
8. The drive device according to claim 5 , wherein
said semiconductor module further includes a heat radiation member attached to a bottom side of said insulating substrate.
9. A drive device for a hybrid vehicle, comprising:
a damper coupled with a crank shaft of an internal combustion engine;
a rotating electric machine disposed so as to have an axis of rotation aligned with an axis of rotation of said damper;
a power transfer mechanism transferring, to a driving shaft, a combination of mechanical power generated by said internal combustion engine with mechanical power generated by said rotating electric machine;
a case housing said damper, said rotating electric machine and said power transfer mechanism; and
a power control unit including a semiconductor module and controlling said rotating electric machine, wherein
said semiconductor module includes:
a first power supply line connected to a first electrode of a power supply;
a second power supply line connected to a second electrode of said power supply;
first and second switching elements connected between said first power supply line and said second power supply line; and
an insulating substrate having said first and second switching elements mounted thereon,
said first power supply line includes a bus bar coupled to a first electrode layer of said first switching element, and said second power supply line includes a wiring layer disposed on said insulating substrate and coupled to a second electrode layer of said second switching element, and
said power control unit is, when being projected in a direction of said axis of rotation, disposed in said case so as to fall within a vertical dimension of a projected portion of said case, that houses said damper, said rotating electric machine and said power transfer mechanism, upon installation on the vehicle.
10. The drive device according to claim 9 , wherein
said semiconductor module further includes:
a signal line layer disposed on said insulating substrate to transmit a control signal to control electrodes of said first and second switching elements;
a first conductor member bringing said first power supply line, said first and second switching elements and said second power supply line into electrical conduction; and
a second conductor member bringing the control electrodes of said first and second switching elements and said signal line layer into electrical conduction, and
said signal line layer is disposed such that an extending direction of said first conductor member is substantially perpendicular to an extending direction of said second conductor member.
11. The drive device according to claim 10 , wherein
said first electrode layer and said second electrode layer are disposed such that a direction of a current passing through said first switching element is opposite to a direction of a current passing through said second switching element.
12. The drive device according to claim 9 , wherein
said semiconductor module further includes a heat radiation member attached to a bottom side of said insulating substrate.
13. The drive device according to claim 5 , wherein
said power control unit further includes:
a reactor disposed at a first side of said rotating electric machine with respect to an axis of rotation center; and
a capacitor disposed at a second side of said rotating electric machine with respect to said axis of rotation center.
14. The drive device according to claim 9 , wherein
said power control unit further includes:
a reactor disposed at a first side of said rotating electric machine with respect to an axis of rotation center; and
a capacitor disposed at a second side of said rotating electric machine with respect to said axis of rotation center.