IP Library Granted Patent US 7,719,347
Granted Patent B2
US 7,719,347 · App. 12/230,907 · Granted May 18, 2010

Semiconductor integrated circuit and method of controlling the same

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Quick Facts
Patent No.
US 7,719,347
App. No.
12/230,907
Granted
May 18, 2010
Kind
B2
Abstract

In related arts, a body voltage needs to be controlled by separately detecting external environment such as temperature. In the related art, variation such as a process parameter for each individual product has not been considered. A semiconductor integrated circuit according to the present invention includes a comparator comparing a leak current of a first conductive type transistor with a leak current of a second conductive type transistor to output a comparing result, and a conduction control signal generator outputting a signal determining a conduction state of the first conductive type transistor and a conduction state of the second conductive type transistor in a power saving control target circuit in a power saving mode based on the comparing result.

Claims (23)

1. A semiconductor integrated circuit, comprising:

a leak current comparator comparing a leak current of a first conductive type transistor with a leak current of a second conductive type transistor to output a comparing result; and

a conduction control signal generator outputting a signal determining a conduction state of the first conductive type transistor and a conduction state of the second conductive type transistor in a control target circuit based on the comparing result in a power saving mode.

2. The semiconductor integrated circuit according to claim 1 , wherein the leak current comparator outputs the comparing result based on a voltage decrease amount of the first conductive type transistor and a voltage decrease amount of the second conductive type transistor.

3. The semiconductor integrated circuit according to claim 1 , wherein the leak current comparator comprises a comparator comparing a potential generated by a voltage decrease amount of the first conductive type transistor and a voltage decrease amount of the second conductive type transistor connected in series with each other with a reference potential divided by a first resistance element and a second resistance element connected in series with each other.

4. The semiconductor integrated circuit according to claim 1 , wherein the conduction control signal generator receives an output of the comparing result made by the leak current comparator and a power saving mode signal output in the power saving mode, and outputs a first conduction control power saving mode signal and a second conduction control power saving mode signal into the control target circuit.

5. The semiconductor integrated circuit according to claim 1 , wherein the power saving control target circuit comprises:

a logic gate part including the first conductive type transistor and the second conductive type transistor; and

an output fixing part fixing an input logical value of the logic gate part in the power saving mode.

6. The semiconductor integrated circuit according to claim 1 , wherein

the power saving control target circuit receives an output of the comparing result made by the leak current comparator and a power saving mode signal output in the power saving mode, and outputs a first conduction control power saving mode signal and a second conduction control power saving mode signal into the control target circuit,

the power saving control target circuit comprises:

a logic gate part including the first conductive type transistor and the second conductive type transistor; and

an output fixing part fixing an input logical value of the logic gate part in the power saving mode, and

the output fixing part comprises:

a first output fixing circuit to which the first conduction control power saving mode signal is input; and

a second output fixing circuit to which the second conduction control power saving mode signal is input.

7. The semiconductor integrated circuit according to claim 1 , wherein the control target circuit forms a pipeline stage processing part in a microcomputer.

8. The semiconductor integrated circuit according to claim 7 , wherein the power saving mode signal sets the pipeline stage processing part in the microcomputer to a disable state according to a logical value of the power saving mode signal.

9. A method of controlling a semiconductor integrated circuit, the method comprising:

comparing a leak current of a first conductive type transistor with a leak current of a second conductive type transistor; and

determining a conduction state of the first conductive type transistor and a conduction state of the second conductive type transistor in a control target circuit based on a comparing result in a power saving mode.

10. The method of controlling the semiconductor integrated circuit according to claim 9 , wherein the comparing result is determined based on a voltage decrease amount of the first conductive type transistor and a voltage decrease amount of the second conductive type transistor.

Assignments (2)
CHANGE OF NAME Recorded Oct 28, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025214/0687 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 8, 2008
From: SUGIMOTO, HIDEKI
To: NEC ELECTRONICS CORPORATION
Reel/Frame 021553/0822 →