Biosensor using nanoscale material as transistor channel and method of fabricating the same
Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time.
1. A biosensor comprising:
a plurality of insulating films;
a first signal line and a second signal line between the plurality of insulating films;
a semiconductor nanostructure on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line; and
a plurality of probes coupled to the semiconductor nanostructure,
wherein the biosensor includes a first region and a second region,
the semiconductor nanostructure is in the first region,
the plurality of insulating films include an uppermost insulating film, and
an upper surface of the semiconductor nanostructure in the first region and an upper surface of the uppermost insulating film in the second region are relatively flat.
2. The biosensor of claim 1 , wherein the plurality of insulating films includes an outer insulating film having an outer surface with a recess region, the semiconductor nanostructure being disposed in the recess region.
3. The biosensor of claim 1 , wherein the plurality of insulating films includes more than two interlayer insulating films, the first and second signal lines being insulated from each other by at least one interlayer insulating film.
4. The biosensor of claim 1 , further comprising:
a gate line insulated from the semiconductor nanostructure, the gate line traversing the first and second signal lines.
5. The biosensor of claim 1 , further comprising:
a coating film on the semiconductor nanostructure.
6. The biosensor of claim 1 , further comprising:
a surface activation layer on the semiconductor nanostructure.
7. The biosensor of claim 1 , wherein the semiconductor nanostructure includes at least one of a nanowire structure, a nanotube structure, and a nanoparticle structure.
8. The biosensor of claim 1 , wherein the semiconductor nanostructure includes at least one of Si, ZnO, GaN, Ge, InAs, GaAs, and C.
9. The biosensor of claim 1 , wherein the semiconductor nanostructure is a multi-walled nanostructure having a core and at least one shell surrounding the core.
10. The biosensor of claim 1 , wherein the upper surface of the semiconductor nanostructure in the first region and the upper surface of the uppermost insulating film in the second region are at about a same level.
11. A biosensor comprising:
a plurality of insulating films including more than two interlayer insulating films;
a first signal line and a second signal line between the plurality of insulating films, the first and second lines being insulated from each other by at least one interlayer insulating film;
a semiconductor nanostructure on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line;
a plurality of probes coupled to the semiconductor nanostructure;
a first contact penetrating at least one of the more than two interlayer insulating films to electrically connect the first signal line with the first side of the semiconductor nanostructure; and
a second contact penetrating at least two of the more than two interlayer insulating films to electrically connect the second signal line with the second side of the semiconductor nanostructure.
12. The biosensor of claim 11 , further comprising:
a first contact pad connecting the first contact with the first side of the semiconductor nanostructure, the first contact pad having a width larger than a width of the first contact; and
a second contact pad connecting the second contact with the second side of the semiconductor nanostructure, the second contact pad having a width larger than a width of the second contact.
13. A method of fabricating a biosensor, comprising:
disposing a semiconductor nanostructure on a substrate;
forming a plurality of insulating films, a first signal line, and a second signal line on the semiconductor nanostructure, the first signal line being electrically connected to a first side of the semiconductor nanostructure and the second signal line being electrically connected to a second side of the semiconductor nanostructure;
exposing the semiconductor nanostructure by removing the substrate; and
coupling a plurality of probes to the semiconductor nanostructure.
14. The method of claim 13 , wherein removing the substrate includes grinding or melting the substrate.
15. The method of claim 13 , wherein forming the plurality of insulating films, the first signal line, and the second signal line includes
forming a lower interlayer insulating film on the semiconductor nanostructure,
forming the first signal line on the lower interlayer insulating film,
forming an upper interlayer insulating film on the first signal line, and
forming the second signal line on the upper interlayer insulating film.
16. The method of claim 13 , further comprising:
forming a gate line insulated from the semiconductor nanostructure, the gate line traversing the first and second signal lines.
17. The method of claim 13 , further comprising:
providing a coating film on the semiconductor nanostructure.
18. The method of claim 13 , wherein the semiconductor nanostructure includes at least one of a nanowire structure, a nanotube structure, and a nanoparticle structure.
19. The method of claim 13 , wherein the semiconductor nanostructure includes at least one of Si, ZnO, GaN, Ge, InAs, GaAs, and C.
20. The method of claim 13 , wherein the semiconductor nanostructure is a multi-walled nanostructure having a core and at least one shell surrounding the core.
21. The method of claim 15 , further comprising:
forming a first contact penetrating the lower interlayer insulating film to electrically connect the first signal line with the first side of the semiconductor nanostructure, and
forming a second contact penetrating the lower and upper interlayer insulating films to electrically connect the second signal line with the second side of the semiconductor nanostructure.