Semiconductor device and method of manufacturing the same
View Patent ↗Provided is a semiconductor device having a substrate, a semiconductor chip flip-chip mounted on the substrate, and a stacked film provided in a gap between the substrate and the semiconductor chip. The stacked film is composed of a protective film covering the surface of the substrate, and an underfill film formed between the solder resist film and the semiconductor chip. The protective film is roughened on the contact surface brought into contacting said underfill film.
1. A semiconductor device, comprising:
a substrate;
a semiconductor chip flip-chip mounted on said substrate; and
a stacked film provided in a gap between said substrate and said semiconductor chip, said stacked film comprising a protective film covering a surface of said substrate, and an underfill film formed between said protective film and said semiconductor chip,
wherein said protective film that is roughened on a contact surface thereof abuts a lowermost surface of said underfill film, and
wherein, said protective film has an arithmetical mean roughness of 0.2 μm or larger and 0.5 μm or smaller on the contact surface thereof brought into contacting said underfill film.
2. The semiconductor device as claimed in claim 1 , further comprising:
first mounting pads formed on said substrate, and connected to said semiconductor chip while placing bumps in between; and
second mounting pads, different from said first mounting pads, formed on said substrate in at least a partial area thereof surrounding said semiconductor chip.
3. The semiconductor device as claimed in claim 2 , wherein said second mounting pads have exposed surfaces.
4. The semiconductor device as claimed in claim 2 , further comprising:
a semiconductor package mounted on said second mounting pads while placing solder balls in between, as being laid over said semiconductor chip.
5. The semiconductor device as claimed in claim 2 , wherein a height of the surface of said protective film as measured from a surface of said first mounting pads is 5 μm or larger and 30 μm or smaller.
6. The semiconductor device as claimed in claim 1 , wherein said protective film comprises a dry-film-type solder resist.
7. The semiconductor device as claimed in claim 1 , wherein the protective film contacts said surface of said substrate.
8. The semiconductor device as claimed in claim 1 , further comprising:
a plurality of mounting pads disposed on the surface of said substrate to connect to said semiconductor chip while placing bumps in between.
9. The semiconductor device as claimed in claim 8 , further comprising:
a plurality of mounting pads disposed at bottoms of openings formed in the protective film on the surface of said substrate to surround said semiconductor chip.
10. The semiconductor device as claimed in claim 2 , wherein second mounting pads are exposed at bottoms of openings formed in the protective film.
11. The semiconductor device as claimed in claim 2 , further comprising:
a plurality of solder balls mounted on the second mounting pads to connect to the semiconductor chip.
12. The semiconductor device as claimed in claim 11 , wherein said solder balls confine said bumps in between.
13. The semiconductor device as claimed in claim 1 , where a bottom surface of said protective film contacts said surface of said substrate.
14. A semiconductor device, comprising:
a substrate;
a semiconductor chip mounted on said substrate;
a protective film contacting a top surface of said substrate; and
an underfill film formed between said protective film and said semiconductor chip,
wherein said protective film comprises a roughened surface that abuts a lowermost surface of said underfill film, and
wherein said protective film has an arithmetical mean roughness of 0.2 μm or larger and 0.5 μm or smaller on a contact surface thereof brought into contacting said underfill film.
15. The semiconductor device as claimed in claim 14 , further comprising:
a plurality of mounting pads disposed on the top surface of said substrate to connect to said semiconductor chip while placing bumps in between.
16. The semiconductor device as claimed in claim 14 , wherein a bottom surface of said protective film contacts the top surface of said substrate.
17. The semiconductor device as claimed in claim 14 , further comprising:
first mounting pads formed on said substrate, and connected to said semiconductor chip while placing bumps in between; and
second mounting pads, different from said first mounting pads, formed on said substrate in at least a partial area thereof surrounding said semiconductor chip.
18. The semiconductor device as claimed in claim 14 , wherein said protective film comprises a dry-film-type solder resist.
19. The semiconductor device as claimed in claim 14 , wherein, in a plan view, said protective film covers an entirety of said underfill film.
20. A semiconductor device, comprising:
a substrate;
a semiconductor chip flip-chip mounted on said substrate;
a stacked film provided in a gap between said substrate and said semiconductor chip, said stacked film comprising a protective film covering a surface of said substrate, and an underfill film formed between said protective film and said semiconductor chip,
wherein said protective film that is roughened on a contact surface thereof abuts a lowermost surface of said underfill film;
first mounting pads formed on said substrate, and connected to said semiconductor chip while placing bumps in between; and
second mounting pads, different from said first mounting pads, formed on said substrate in at least a partial area thereof surrounding said semiconductor chip,
wherein a height of the surface of said protective film as measured from a surface of said first mounting pads is 5 μm or larger and 30 μm or smaller.
21. A semiconductor device, comprising:
a substrate;
a semiconductor chip mounted on said substrate;
a protective film contacting a top surface of said substrate;
an underfill film formed between said protective film and said semiconductor chip,
wherein said protective film comprises a roughened surface that abuts a lowermost surface of said underfill film;
first mounting pads formed on said substrate, and connected to said semiconductor chip while placing bumps in between; and
second mounting pads, different from said first mounting pads, formed on said substrate in at least a partial area thereof surrounding said semiconductor chip,
wherein a height of the surface of said protective film as measured from a surface of said first mounting pads is 5 μm or larger and 30 μm or smaller.