Semiconductor device
View Patent ↗A semiconductor device ( 100 ) includes a semiconductor substrate ( 2 ), an inductor ( 4 ) provided on the semiconductor substrate ( 2 ), a metal ball ( 8 ) provided on the inductor ( 4 ) so as to come into contact with the inductor ( 4 ), and a bonding wire ( 10 ) electrically connected to the metal ball ( 8 ). The semiconductor device ( 100 ) exchanges signals with an external via the inductor ( 4 ) and the metal ball ( 8 ). The inductor ( 4 ) also serves as the bonding pad and therefore the inductor and the bonding pad need not to be arranged in pairs.
1. A semiconductor device, comprising:
a semiconductor substrate;
a first inductor provided on the semiconductor substrate;
a metal ball provided on the first inductor so as to come in contact with the first inductor; and
a bonding wire electrically connected to the metal ball,
wherein the semiconductor device exchanges signals with an external via the first inductor, the metal ball, and the bonding wire.
2. A semiconductor device according to claim 1 , wherein the first inductor comprises a first wiring arranged in a spiral shape.
3. A semiconductor device according to claim 2 , wherein the first wiring has different widths at a central portion of the first inductor and an outer peripheral portion of the first inductor.
4. A semiconductor device according to claim 3 , wherein the first wiring has a wider width at the central portion of the first inductor than a width of the first wiring at the outer peripheral portion of the first inductor.
5. A semiconductor device according to claim 3 , wherein the first wiring has a wider width at the outer peripheral portion of the first inductor than a width of the first wiring at the central portion of the first inductor.
6. A semiconductor device according to claim 1 , further comprising a second inductor provided below the first inductor.
7. A semiconductor device according to claim 6 , wherein the second inductor comprises a second wiring arranged in a spiral shape.
8. A semiconductor device according to claim 6 , wherein the first inductor and the second inductor are electrically connected to each other.
9. A semiconductor device according to claim 1 , further comprising a wiring layer provided on the semiconductor substrate,
wherein the first inductor is provided on the wiring layer.
10. A semiconductor device according to claim 9 , wherein:
the wiring layer comprises a third wiring; and
the first inductor is electrically connected to the third wiring.
11. A semiconductor device according to claim 10 , wherein:
the wiring layer comprises a via plug; and
the first inductor is electrically connected to the wiring via the via plug.
12. A semiconductor device according to claim 9 , further comprising a protective insulating film provided on the wiring layer.
13. A semiconductor device according to claim 12 , wherein the protective insulating film comprises an opening portion to expose at least a portion of the first inductor.
14. A semiconductor device according to claim 12 , wherein the first inductor is provided on the protective insulating film.
15. A semiconductor device, comprising:
a semiconductor substrate;
a first inductor provided on the semiconductor substrate; and
a metal ball provided on the first inductor so as to come into contact with the first inductor,
wherein the semiconductor device exchanges signals with an external via the first inductor and the metal ball, and the metal ball is contacted to a plurality of different parts of the first inductor.
16. The semiconductor device according to claim 15 , wherein the metal ball is contacted to a top surface of the first inductor and a side surface of the first inductor.