Semiconductor device using metal nitride as insulating film and its manufacture method
View Patent ↗A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
1. A method of manufacturing a semiconductor device, comprising steps of:
forming a first insulating film consisting of insulating material on a semiconductor substrate;
forming a second insulating film consisting of insulating metal nitride on said first insulating film, the insulating metal nitride containing zirconium as a constituent element;
patterning said second insulating film;
etching said first insulating film by using said second insulating film as a mask to form a recess in said first insulating film;
filling the recess with conductive material;
forming third insulating film over the second insulating film and the conductive material; and
forming a wiring in the third insulating film, the wiring being electrically connected to the conductive material.
2. A method of manufacturing a semiconductor device, comprising steps of:
forming a first insulating film on a semiconductor substrate, at least a surface layer of said first insulating film consisting of metal nitride;
forming a second insulating film consisting of inorganic insulating material containing silicon on said first insulating film;
forming a recess in a lamination structure of said second and first insulating films;
depositing a conductive film consisting of conductive material on said second insulating film, said conductive film being filled in said recess; and
polishing said conductive film until said second insulating film is exposed, and leaving a portion of said conductive film in said recess.
3. A method of manufacturing a semiconductor device according to claim 2 , wherein said first insulating film includes a low dielectric constant film consisting of insulating material having a dielectric constant lower than a dielectric constant of said second insulating film and a nitride layer consisting of insulating metal nitride and formed on the low dielectric constant film.
4. A method of manufacturing a semiconductor device according to claim 2 , wherein the insulating metal nitride contains as a constituent element one element selected from a group consisting of zirconium, titanium and hafnium.