Individually controlled multiple III-nitride half bridges

1. A power semiconductor device, comprising:

a single semiconductor die including III-nitride power semiconductor devices formed therein, first and second semiconductor devices of said III-nitride power semiconductor devices each including source fingers, drain fingers, and gate fingers, each of said gate fingers disposed between one of said drain fingers and one of said source fingers;

said source fingers of said first semiconductor device and said drain fingers of said second semiconductor device being coupled to a common rail such that said first semiconductor device and said second semiconductor device are electrically connected to one another through said common rail;

said source fingers, said drain fingers, and said gate fingers being substantially perpendicular to said common rail;

wherein said single semiconductor die includes an isolation feature formed therein to electrically isolate said first and second semiconductor devices.

2. The power semiconductor device of claim 1 , comprising a power stage and a control stage formed in said single semiconductor die;

said first semiconductor device being a high side III-nitride power semiconductor device of said power stage, said first semiconductor device having a first gate coupled to a first output of a first half-bridge in said control stage;

said second semiconductor device being a low side III-nitride power semiconductor device of said power stage, said second semiconductor device having a second gate coupled to a second output of a second half-bridge in said control stage.

3. The power semiconductor device of claim 1 , wherein each of said III-nitride power semiconductor devices comprise a III-nitride heterojunction that includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate a two-dimensional electron gas in one of said one and said another III-nitride semiconductor bodies.

4. The power semiconductor device of claim 3 , wherein said one III-nitride body is comprised of AlGaN and said another III-nitride body is comprised of GaN.

5. The power semiconductor device of claim 1 , wherein said source fingers and said drain fingers are alternately arranged in an interdigitated pattern.

6. A power semiconductor device comprising:

a single semiconductor die having formed therein a power stage and a control stage for controlling said power stage,

said power stage including a plurality of parallel-connected half-bridge circuits each including a high side III-nitride power semiconductor device and a low side III-nitride power semiconductor device,

each said high side III-nitride power semiconductor device in each said half-bridge in said power stage including a gate coupled to a respective output of a first half-bridge in said control stage, and

each said low side III-nitride power semiconductor device in each said half-bridge in said power stage including a gate coupled to a respective output of a second half-bridge in said control stage.

7. The power semiconductor device of claim 6 , wherein each said first half-bridge and said second half-bridge in said control stage includes a first III-nitride power semiconductor device and a second III-nitride power semiconductor device,

each said first III-nitride power semiconductor device and said second III-nitride power semiconductor device including a plurality of source electrodes connected to a common source rail and a plurality of drain electrodes connected to a common drain rail,

wherein said common source rail of said first III-nitride power semiconductor device and said common drain rail of said second III-nitride power semiconductor device are unified into a single output rail serving as an output connection.

8. The power semiconductor device of claim 7 , further comprising isolation features formed in said single semiconductor die to electrically isolate said high side III-nitride power semiconductor devices, said low side III-nitride power semiconductor devices, said first III-nitride power semiconductor devices and said second III-nitride power semiconductor devices.

9. The power semiconductor device of claim 7 , wherein each said power semiconductor device comprises a III-nitride heterojunction that includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate a two-dimensional electron gas in one of said one and said another III-nitride semiconductor bodies.

10. The power semiconductor device of claim 9 , wherein said one III-nitride body is comprised of AlGaN and said another III-nitride body is comprised of GaN.

11. The power semiconductor device of claim 7 , wherein said plurality of source electrodes and said plurality of drain electrodes are alternately arranged in an interdigitated pattern.