IP Library › Granted Patent US 8,197,936
Granted Patent B2
US 8,197,936 · App. 12/236,083 · Granted Jun 12, 2012

Cutting structures

Assignee: Smith International, Inc.
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Quick Facts
Patent No.
US 8,197,936
App. No.
12/236,083
Granted
Jun 12, 2012
Kind
B2
Abstract

A polycrystalline diamond compact cutter that includes a thermally stable polycrystalline diamond layer, a carbide substrate, and a polycrystalline cubic boron nitride layer interposed between the thermally stable polycrystalline diamond layer and the carbide substrate such that at least a portion of the polycrystalline cubic boron nitride layer is radially surrounded by the thermally stable polycrystalline diamond layer is disclosed.

Claims (37)

1. A polycrystalline diamond compact cutter, comprising:

a thermally stable polycrystalline diamond layer formed from a polycrystalline diamond layer having substantially all of a binder material removed from at least a portion of the polycrystalline diamond layer;

a carbide substrate; and

a polycrystalline cubic boron nitride layer interposed between the thermally stable polycrystalline diamond layer and the carbide substrate, wherein at least a portion of the polycrystalline cubic boron nitride layer is radially surrounded by the thermally stable polycrystalline diamond layer.

2. The polycrystalline diamond compact cutter of claim 1 , wherein the thermally stable polycrystalline diamond layer extends from a top or side surface of the polycrystalline diamond layer an average depth of at least about 0.006 mm to less than about 0.1 mm.

3. The polycrystalline diamond compact cutter of claim 1 , wherein the thermally stable polycrystalline diamond layer extends from a top or side surface of the polycrystalline diamond layer an average depth of about 0.02 mm to less than about 0.09 mm.

4. The polycrystalline diamond compact cutter of claim 1 , wherein the thermally stable polycrystalline diamond layer extends from a top or side surface of the polycrystalline diamond layer an average depth of about 0.04 mm to about 0.08 mm.

5. The polycrystalline diamond compact cutter of claim 1 , wherein the thermally stable polycrystalline diamond layer extends along a side surface of the polycrystalline diamond layer for a length of about 25 to 100% of the total length of the side surface.

6. The polycrystalline diamond compact cutter of claim 1 , wherein the thermally stable polycrystalline diamond layer extends along the entire polycrystalline diamond layer.

7. The polycrystalline diamond compact cutter of claim 1 , wherein the polycrystalline cubic boron nitride layer has a cubic boron nitride content of at least 70% by volume.

8. The polycrystalline diamond compact cutter of claim 1 , wherein the polycrystalline cubic boron nitride layer comprises one of Al, Si, and a mixture thereof.

9. The polycrystalline diamond compact cutter of claim 1 , wherein the polycrystalline cubic boron nitride layer further comprises at least one selected from a carbide, a nitride, a carbonitride, and a boride of a Group 4a, 5a, and 6a transition metal.

10. The polycrystalline diamond compact cutter of claim 1 , wherein the polycrystalline cubic boron nitride layer comprises an inner region and an outer region differing in cubic boron nitride content.

11. The polycrystalline diamond compact cutter of claim 10 , wherein the cubic boron nitride content of the outer region is greater than the cubic nitride content of the inner region.

12. The polycrystalline diamond compact cutter of claim 1 , wherein the thermally stable polycrystalline diamond layer has a cutting edge with a thickness of at least 0.010 inches.

13. The polycrystalline diamond compact cutter of claim 1 , wherein an interface between the carbide substrate and the polycrystalline cubic boron nitride layer is non-planar.

14. The polycrystalline diamond compact cutter of claim 1 , wherein the polycrystalline cubic boron nitride layer has a cubic boron nitride content of at least 85% by volume.

15. The polycrystalline diamond compact cutter of claim 1 , wherein the polycrystalline cubic boron nitride layer comprises an inner polycrystalline cubic boron nitride region and an outer polycrystalline cubic boron nitride region, and wherein the outer polycrystalline cubic boron nitride region has a cubic boron nitride content greater than the inner polycrystalline cubic boron nitride region.

16. The polycrystalline diamond compact cutter of claim 1 , wherein an interface between the thermally stable polycrystalline diamond layer and the polycrystalline cubic boron nitride layer is non-planar.

17. The polycrystalline diamond compact cutter of claim 15 , wherein an interface between the carbide substrate and the polycrystalline cubic boron nitride layer is non-planar.

18. A polycrystalline diamond compact cutter, comprising:

a thermally stable polycrystalline diamond layer formed from a polycrystalline diamond layer having substantially all of a binder material removed from at least a portion of the polycrystalline diamond layer;

a carbide substrate; and

at least two polycrystalline cubic boron nitride layers interposed between the thermally stable polycrystalline diamond layer and the carbide substrate, wherein at least a portion of at least one of the at least two polycrystalline cubic boron nitride layers is radially surrounded by the thermally stable polycrystalline diamond layer.

19. The polycrystalline diamond compact cutter of claim 18 , wherein the thermally stable polycrystalline diamond layer extends from a top or side surface of the polycrystalline diamond layer an average depth of at least about 0.006 mm to less than about 0.1 mm.

20. The polycrystalline diamond compact cutter of claim 18 , wherein the thermally stable polycrystalline diamond layer extends from a top or side surface of the polycrystalline diamond layer an average depth of about 0.02 mm to less than about 0.09 mm.

21. The polycrystalline diamond compact cutter of claim 18 , wherein the thermally stable polycrystalline diamond layer extends from a top or side surface of the polycrystalline diamond layer an average depth of about 0.04 mm to about 0.08 mm.

22. The polycrystalline diamond compact cutter of claim 18 , wherein the thermally stable polycrystalline diamond layer extends along a side surface of the polycrystalline diamond layer for a length of about 25 to 100% of the total length of the side surface.

23. The polycrystalline diamond compact cutter of claim 18 , wherein the thermally stable polycrystalline diamond layer extends along the entire polycrystalline diamond layer.

24. The polycrystalline diamond compact cutter of claim 18 , wherein at least a portion of the at least two polycrystalline cubic boron nitride layers is radially surrounded by the thermally stable polycrystalline diamond layer.

25. The polycrystalline diamond compact cutter of claim 18 , wherein the at least two polycrystalline cubic boron nitride layers have a cubic boron nitride content of at least 70% by volume.

26. The polycrystalline diamond compact cutter of claim 18 , wherein at least one of the at least two polycrystalline cubic boron nitride layers comprises an inner polycrystalline cubic boron nitride layer and at least one of the at least two polycrystalline cubic boron nitride layers comprises an outer polycrystalline cubic boron nitride layer.

27. The polycrystalline diamond compact cutter of claim 21 , wherein the outer polycrystalline cubic boron nitride layer has a cubic boron nitride content greater than the inner polycrystalline cubic boron nitride layer.

28. The polycrystalline diamond compact cutter of claim 18 , wherein an interface between the carbide substrate and one of the at least two polycrystalline cubic boron nitride layers is non-planar.

29. The polycrystalline diamond compact cutter of claim 18 , wherein an interface between the thermally stable polycrystalline diamond layer and one of the at least two polycrystalline cubic boron nitride layers is non-planar.

30. The polycrystalline diamond compact cutter of claim 18 , wherein an interface between the at least two polycrystalline cubic boron nitride layer is non-planar.

31. The polycrystalline diamond compact cutter of claim 18 , wherein at least one of the two polycrystalline cubic boron nitride layers has a cubic boron nitride content of at least 85% by volume.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2008
From: KESHAVAN, MADAPUSI K.
To: SMITH INTERNATIONAL, INC.
Reel/Frame 021584/0231 →
Continuity (2)
Continuation In Part 11044651 · Jan 27, 2005
Related Publication 20090022952A1 · Jan 22, 2009