IP Library › Granted Patent US 7,983,859
Granted Patent B2
US 7,983,859 · App. 12/236,309 · Granted Jul 19, 2011

System and method for analyzing defects on a wafer

Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 7,983,859
App. No.
12/236,309
Granted
Jul 19, 2011
Kind
B2
Abstract

A defect analyzer system having a program storage device storing instructions and an arithmetic unit executing the instructions. The system divides a defect analyzing region of a wafer into a plurality of grid squares and classifies the grid squares into a plurality of groups. The system then matches the defect information with the defect analyzing region. The defect information includes defect positions and sizes detected in the defect analyzing region. The system calculates a defect size distribution for each defect size in each of the groups, compares the defect size distribution and a predetermined estimation distribution for each of the groups, and calculates a difference. The system then compares the difference of each of the groups and a predetermined threshold value, extracts the group having the difference equal to or smaller than the predetermined threshold value, and outputs the defect information corresponding to the extracted group.

Claims (52)

1. A defect analyzer system, comprising:

a program storage device storing instructions; and

an arithmetic unit executing the instructions to:

divide a defect analyzing region of a wafer into a plurality of grid squares, the wafer having a circuit pattern formed thereon;

store a pattern feature quantity based on design data of the circuit pattern;

extract a pattern feature quantity for each of the grid squares from the stored pattern feature quantity;

classify the plurality of grid squares into a plurality of groups based on the pattern feature quantities;

store defect information including a defect position and size having been detected in the defect analyzing region;

extract the defect information from the stored defect information and match the defect information with the defect analyzing region;

determine the number of defects for each defect size in each of the plurality of groups and calculate a defect size distribution;

compare the defect size distribution and a predetermined estimation distribution in each of the plurality of groups and calculate a difference; and

compare the difference of each of the plurality of groups and a predetermined threshold value, extract the group having the difference equal to or smaller than the predetermined threshold value, and output the defect information corresponding to the extracted group.

2. The defect analyzer system according to claim 1 , further comprising a defect analyzing unit configured to perform defect analysis using the defect information outputted from the arithmetic unit.

3. The defect analyzer system according to claim 1 , wherein the arithmetic unit executes the instructions to correct a test parameter of a defect tester which tests a defect of the wafer, based on a comparison result of the predetermined estimation distribution and a defect size distribution of a group having not been extracted by the arithmetic unit.

4. The defect analyzer system according to claim 1 , wherein the pattern feature quantity is at least one selected from a pattern coverage factor, a pattern perimeter, and a defect size based on a critical area analysis.

5. A defect analyzing method comprising:

dividing, by an arithmetic unit, a defect analyzing region of a wafer into a plurality of grid squares, the wafer having a circuit pattern formed thereon;

extracting, by the arithmetic unit, a pattern feature quantity for each of the grid squares based on design data of the circuit pattern;

classifying, by the arithmetic unit, the plurality of grid squares into a plurality of groups based on the pattern feature quantities;

matching, by the arithmetic unit, the defect analyzing region with defect information including a defect position and size having been detected in the defect analyzing region;

determining, by the arithmetic unit, the number of defects for each defect size in each of the plurality of groups and calculating a defect size distribution;

comparing, by the arithmetic unit, the defect size distribution of each of the plurality of groups and a predetermined estimation distribution and calculating a difference;

comparing, by the arithmetic unit, the difference of each of the plurality of groups and a predetermined threshold value and extracting the defect information corresponding to the group having the difference equal to or smaller than the predetermined threshold value; and

performing, by a defect analyzing unit, defect analysis using the extracted defect information.

6. The defect analyzing method according to claim 5 , further comprising correcting, by the arithmetic unit, a test parameter of a defect tester which tests a defect of the wafer, based on a comparison result of the predetermined estimation distribution and a defect size distribution of a group having the difference larger than the predetermined threshold value.

7. The defect analyzing method according to claim 5 , wherein the pattern feature quantity is at least one selected from a pattern coverage factor, a pattern perimeter, and a defect size based on a critical area analysis.

8. A defect analyzer system comprising:

a grogram storage device storing instructions; and

an arithmetic unit executing the instructions to:

divide a defect analyzing region of a wafer into a plurality of grid squares, the wafer having a circuit pattern formed thereon;

store a pattern feature quantity based on design data of the circuit pattern;

extract a pattern feature quantity for each of the grid squares from the stored pattern feature quantity;

classify the plurality of grid squares into a plurality of groups based on the pattern feature quantities;

store defect information including a defect position and size having been detected in the defect analyzing region;

extract the defect information from the stored defect information and match the defect information with the defect analyzing region;

determine the number of defects for each defect size in each of the plurality of groups and calculate a defect size distribution; and

identify whether the defects in each of the plurality of groups are random defects or systematic defects, based on the defect size distribution.

9. The defect analyzer system according to claim 8 , wherein the arithmetic unit executes the instructions to calculate an approximate function of the defect size distribution and identifies whether the defects are random defects or systematic defects based on a power value of the approximate function.

10. The defect analyzer system according to claim 8 , wherein the arithmetic unit executes the instructions to determine a priority order of defect analysis on the plurality of groups based on an identification result of the defects in each of the plurality of groups, and output the defect information corresponding to the groups according to the priority order.

11. The defect analyzer system according to claim 10 , further comprising a defect analyzing unit configured to perform defect analysis using the defect information outputted from the arithmetic unit.

12. The defect analyzer system according to claim 8 , wherein the pattern feature quantity is at least one selected from a pattern coverage factor, a pattern perimeter, and a defect size based on a critical area analysis.

13. A defect analyzing method comprising:

dividing, by an arithmetic unit, a defect analyzing region of a wafer into a plurality of grid squares, the wafer having a circuit pattern formed thereon;

extracting, by the arithmetic unit, a pattern feature quantity for each of the grid squares based on design data of the circuit pattern;

classifying, by the arithmetic unit, the plurality of grid squares into a plurality of groups based on the pattern feature quantities;

matching, by the arithmetic unit, the defect analyzing region with defect information including a defect position and size having been detected in the defect analyzing region;

determining, by the arithmetic unit, the number of defects for each defect size in each of the plurality of groups and calculating a defect size distribution;

identifying, by the arithmetic unit, whether the defects in each of the plurality of groups are random defects or systematic defects, based on the defect size distribution;

determining, by the arithmetic unit, a priority order of defect analysis on the plurality of groups based on an identification result and extracting the defect information corresponding to each of the groups according to the priority order; and

performing, by a defect analyzing unit, defect analysis using the extracted defect information.

14. The defect analyzing method according to claim 13 , further comprising calculating, by the arithmetic unit, an approximate function of the defect size distribution and identifying whether the defects are random defects or systematic defects based on a power value of the approximate function.

15. The defect analyzing method according to claim 13 , wherein the pattern feature quantity is at least one selected from a pattern coverage factor, a pattern perimeter, and a defect size based on a critical area analysis.

Assignments (5)
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043709/0035 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2008
From: SATO, YOSHIYUKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 021802/0961 →
Priority Claims (2)
JP 2007-248955 · Sep 26, 2007 · national
JP 2008-149303 · Jun 6, 2008 · national
Continuity (1)
Related Publication 20090082979A1 · Mar 26, 2009