Alignment mark and defect inspection method
View Patent ↗A defect inspection method is disclosed. A first type defect inspection system is used to perform a first defect inspection by aligning to an alignment mark on a wafer as a reference point for the first defect inspection. A fabrication process is performed on the wafer thereafter, and a second defect inspection is performed by using a second type defect inspection system to align the alignment mark on the wafer as the reference point for the second defect inspection.
1. A defect inspection method, comprising:
performing a first defect inspection by a first type defect inspection system by aligning to an alignment mark on a wafer as a reference point for the first defect inspection;
performing at least one fabrication process to the wafer; and
performing a second defect inspection by a second type defect inspection system by aligning to the alignment mark on the wafer as a reference point for the second defect inspection.
2. The defect inspection method of claim 1 , wherein the first inspection is optical and the second inspection is electrical.
3. The defect inspection method of claim 1 , wherein the fabrication process is selected from etching process, lithography, CMP process, implantation process, cleaning process, material forming process or combination thereof.
4. The defect inspection method of claim 1 , wherein the alignment mark comprises at least one right angle.
5. The defect inspection method of claim 1 , wherein the alignment mark is a T-shaped alignment mark.
6. The defect inspection method of claim 1 , wherein the alignment mark is a L-shaped alignment mark.
7. The defect inspection method of claim 1 , wherein the alignment mark is a cross-shaped alignment mark.
8. The defect inspection method of claim 1 , wherein the first defect inspection further comprises obtaining a first defect map.
9. The defect inspection method of claim 8 , wherein the second defect inspection further comprises obtaining a second defect map.
10. The defect inspection method of claim 9 , further comprising comparing the first defect map and the second defect map.