Manufacturing method for interconnection having stress-absorbing layer between the semiconductor substrate and the external connection terminal
View Patent ↗A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.
1. A manufacturing method for semiconductor device, comprising:
preparing a semiconductor substrate including a first face and a second face on a side opposite to the first face;
forming a first electrode on the first face of the semiconductor substrate;
forming a second electrode having a top face and a rear face on the first face of the semiconductor substrate;
forming on the first face of the semiconductor substrate an interconnection electrically connected to the first electrode;
electrically connecting the first electrode to the interconnection by forming an external connection terminal connected to the interconnection on the first face of the semiconductor substrate;
forming a stress-absorbing layer between the semiconductor substrate and the external connection terminal;
forming a groove portion having a bottom face including at least part of the rear face of the second electrode, on the second face of the semiconductor substrate;
forming an insulating film on side wall of the groove portion; and
forming in the groove portion a conductive portion electrically connecting an electronic element to the second electrode.
2. The manufacturing method for semiconductor device according to claim 1 , wherein photolithography and etching are used in the forming of the groove portion.
3. The manufacturing method for semiconductor device according to claim 1 , further comprising:
forming a connection electrode electrically connected to the conductive portion, on the second face of the semiconductor substrate, wherein
the connection electrode and the conductive portion are formed in one operation.
4. The manufacturing method for semiconductor device according to claim 1 , further comprising:
forming a plurality of semiconductor devices on the semiconductor substrate in one operation;
dividing each of the semiconductor devices by cutting the semiconductor substrate; and
obtaining a plurality of individual semiconductor devices.