Methods of forming multi-chip semiconductor substrates
View Patent ↗Methods of forming multi-chip semiconductor substrates include forming a first plurality of dicing streets in a first surface of a first semiconductor wafer having a first plurality of bonding sites thereon and forming a second plurality of dicing streets in a first surface of a second semiconductor wafer having a second plurality of bonding sites thereon. The first surfaces of the first and second semiconductor wafers are bonded together so that the first plurality of dicing streets are aligned with the second plurality of dicing streets and the first plurality of bonding sites are matingly received and permanently affixed within the second plurality of bonding sites. A plurality of bonded pairs of semiconductor chips are then formed by planarizing the second surface of the second semiconductor wafer until the second plurality of dicing streets are exposed.
1. A method of forming multi-chip semiconductor substrates, comprising:
forming a first plurality of intersecting dicing streets in a first surface of a first semiconductor wafer having a first plurality of bonding site thereon;
forming a second plurality of intersecting dicing streets in a first surface of a second semiconductor wafer having a second plurality of bonding sites thereon;
bonding the first surface of the first semiconductor wafer to the first surface of the second semiconductor wafer so that the first and second plurality of intersecting dicing streets are aligned with each other and each of the first plurality of bonding sites becomes permanently affixed within a corresponding one of the second plurality of bonding sites; and then
removing portions of a second surface of the second semiconductor wafer to expose bottoms of the second plurality of intersecting dicing streets and thereby define a plurality of bonded pairs of semiconductor chips.
2. The method of claim 1 , further comprising packaging at least one of the plurality of bonded pairs of chips as a multi-chip module.
3. The method of claim 1 , wherein said removing step is preceded by:
planarizing a second surface of the first semiconductor wafer to a sufficient depth to expose bottoms of the first plurality of intersecting dicing streets.
4. The method of claim 3 , further comprising:
forming a third plurality of intersecting dicing streets in a first surface of a third semiconductor wafer; and
bonding the first surface of the third semiconductor wafer to the planarized second surface of the first semiconductor wafer so that the first and third plurality of intersecting dicing streets are aligned with each other.
5. The method of claim 4 , further comprising:
planarizing a second surface of the third semiconductor wafer to a sufficient depth to expose bottoms of the third plurality of intersecting dicing streets.
6. The method of claim 5 , wherein said removing step comprises removing portions of a second surface of the second semiconductor wafer to expose bottoms of the second plurality of intersecting dicing streets and thereby define a plurality of bonded three-chip semiconductor substrates.
7. The method of claim 1 , wherein said forming a first plurality of intersecting dicing streets comprises forming a first plurality of intersecting dicing streets having widths less than about 15 μm, in a first surface of a first semiconductor wafer.
8. The method of claim 1 , wherein said removing comprises chemically-mechanically polishing the second surface of the second semiconductor wafer.
9. The method of claim 1 , wherein each of the first plurality of bonding sites is configured to be matingly received within a corresponding one of the second plurality of bonding sites.
10. The method of claim 9 , wherein each of the first plurality of bonding sites comprises a bonding site extension; and wherein each of the second plurality of bonding sites comprises a bonding site recess into which a corresponding bonding site extension is received during said bonding.
11. The method of claim 10 , wherein each bonding site extension within the first plurality of bonding sites comprises a thermally malleable electrical conductor at a distal end thereof.
12. The method of claim 11 , wherein the thermally malleable electrical conductor comprises a solder material.
13. The method of claim 10 , wherein each bonding site extension within the first plurality of bonding sites comprises a fusible metal alloy having a melting point in a range from about 90° C. to about 450° C.
14. The method of claim 10 , wherein each bonding site recess in the second plurality of bonding sites comprises a cylindrically-shaped metal receiver configured to receive a bonding side extension of a corresponding one of the first plurality of bonding sites.
15. The method of claim 9 , wherein each of the first plurality of bonding sites has a T-shaped cross-section; and wherein each of the second plurality of bonding sites has a U-shaped cross-section.