Piezoelectric transducers and associated methods
Piezoelectric transducers and associated methods are disclosed. In one embodiment, a piezoelectric transducer includes a support member, a piezoelectric element attached to the support member, and a pressurized chamber at one side of the piezoelectric element. The piezoelectric element comprises a flexible film, and the pressurized chamber contains a fluid that applies a static pressure to a side of the piezoelectric element.
1. A piezoelectric device, comprising:
a support member;
a piezoelectric element attached to the support member, the support member and the piezoelectric element at least partially defining a chamber therebetween; and
a fluid disposed in the chamber between the piezoelectric element and the support member, the fluid applying a first pressure to a first side of the piezoelectric element, the first pressure being greater than a second pressure on a second side of the piezoelectric element, wherein the first side is facing toward the chamber, and wherein the second side is opposite the first side, and further wherein the first pressure is static.
2. The piezoelectric device of claim 1 wherein the first pressure is greater than the second pressure such that the piezoelectric element has a static curvature.
3. The piezoelectric device of claim 1 wherein the first pressure is greater than the second pressure such that the piezoelectric element has a generally spherical shape.
4. The piezoelectric device of claim 1 wherein the piezoelectric device is configured as a sensor adapted to convert an acoustic signal into an electric signal.
5. The piezoelectric device of claim 1 wherein the piezoelectric element comprises a flexible diaphragm.
6. The piezoelectric device of claim 1 wherein the piezoelectric element comprises a flexible diaphragm having a film stack, the film stack including individual layers of gold, lead zirconate-titanate, platinum, silicon oxide, and doped silicon.
7. The piezoelectric device of 6 wherein the gold layer has a thickness of approximately 0.3 micron, the lead zirconate-titanate layer has a thickness of approximately 1.5 micron, the platinum layer has a thickness of approximately 0.2 micron, the silicon oxide has a thickness of approximately 0.1 micron, and the doped silicon layer has a thickness of approximately 2.0 micron.
8. A method for transducing signals, comprising:
applying a static pressure to a first side of a piezoelectric element, the static pressure being greater than an external pressure on a second side of the piezoelectric element opposite the first side;
inducing a static curvature in the piezoelectric element with the applied static pressure before an input signal is applied to the piezoelectric element;
applying the input signal to piezoelectric element with the static curvature; and
transducing the input signal via the piezoelectric element.
9. The method of claim 8 wherein transducing the input signal via the piezoelectric element comprises applying a voltage and/or a current to the piezoelectric element.
10. The method of claim 8 wherein transducing the input signal via the piezoelectric element comprises converting mechanical energy applied to the piezoelectric element to an electrical signal.
11. The method of claim 8 wherein transducing the input signal via the piezoelectric element comprises converting an acoustic signal applied to the piezoelectric element to an electrical signal.
12. The method of claim 8 wherein transducing the input signal via the piezoelectric element comprises converting an ultrasonic signal applied to the piezoelectric element to an electrical signal.
13. The method of claim 8 wherein transducing the input signal via the piezoelectric element comprises converting a megasonic signal applied to the piezoelectric element to an electrical signal.
14. A piezoelectric device, comprising:
a support member;
a piezoelectric element attached to the support member, the support member and the piezoelectric element at least partially forming a chamber therebetween, wherein the piezoelectric element has a first side facing the support member and a second side opposite the first side; and
a gas in the chamber formed by the piezoelectric element and the support member, the gas applying a static pressure to the first side of the piezoelectric element, the static pressure forcing the piezoelectric element to extend away from the support member with a static curvature.
15. The piezoelectric device of 14 wherein
the piezoelectric element comprises a film stack including layers of gold, lead zirconate-titanate, platinum, silicon oxide, and doped silicon; and
the gold layer has a thickness of approximately 0.3 micron;
the lead zirconate-titanate layer has a thickness of approximately 1.5 micron;
the platinum layer has a thickness of approximately 0.2 micron;
the silicon oxide has a thickness of approximately 0.1 micron; and
the doped silicon layer has a thickness of approximately 2.0 micron.
16. The piezoelectric device of claim 14 wherein the first pressure is greater than a second pressure at the second side of the piezoelectric element.
17. The piezoelectric device of claim 14 wherein the static pressure forces the piezoelectric element to have a generally spherical shape, a parabolic shape, or an oval shape.
18. The piezoelectric device of claim 14 wherein the piezoelectric element comprises a film stack including individual layers of gold, lead zirconate-titanate, platinum, silicon oxide, and doped silicon.