Granted Patent B2

US 7,763,976 · App. 12/242,550 · Granted Jul 27, 2010

Abstract

Claims (30)

1. An IC module, comprising:

an IC panel, comprising:

an electrically conductive embedded ground plane (EGP) defining an integrated circuit (IC) cavity and an integrated passive device (IPD) cavity;

an IC die positioned wherein a perimeter of the IC cavity surrounds the IC die; and

an encapsulating material encapsulating substantially all but an active surface of the IC die and the EGP and filling the IPD cavity; and

an IPD structure overlying an upper surface of the IC panel, wherein the IPD structure defines an IPD having a first terminal in electrical contact with the IC die and wherein at least a portion of the IPD overlies the encapsulating material filling the IPD cavity.

2. The module of claim 1 , wherein the IPD comprises an inductive transmission line element including an inductor.

3. The module of claim 2 , wherein the IPD comprises a microstrip (MS) inductor.

4. The module of claim 2 , wherein the IPD comprises a coplanar wave guide (CPW) inductor.

5. The module of claim 1 , wherein the EGP comprises a conductive material selected from the group consisting of aluminum and copper.

6. The module of claim 1 , wherein the EGP includes an exposed surface and further wherein the active surface of the IC die and the exposed surface of the EGP are substantially co-planar.

7. The module of claim 6 , wherein an upper surface of the encapsulating material is substantially co-planar with the active surface of the IC die.

8. The module of claim 1 , wherein the IPD structure includes a first layer formed in contact with an upper surface of the IC panel, the first layer including a first dielectric layer, first via elements contacting elements of the IC die, and a first interconnect element.

9. The module of claim 8 , wherein the IPD structure includes a second layer formed in contact with an upper surface of the first layer, the second layer including a second dielectric layer, second via elements contacting elements of the first dielectric layer, and a second interconnect element.

10. The module of claim 1 , wherein the IC die comprises a radio frequency IC.

11. A multi-component assembly, comprising:

a radio frequency (RF) integrated circuit (IC) operable as an RF transceiver;

an electrically conductive embedded ground plane (EGP), wherein the EGP includes:

a device cavity defining a device cavity perimeter that surrounds the RF IC; and

an IPD cavity;

an encapsulating material encapsulating the RF IC and the EGP, wherein an active surface of the RF IC, a surface of the EGP, and a surface of the encapsulating material are substantially co-planar and wherein the encapsulating material occupies the IPD cavity;

a plurality of interconnect layers defining an inductor, wherein the inductor overlies the encapsulating material occupying the IPD cavity.

12. The assembly of claim 11 , wherein the inductor comprises a microstrip inductor.

13. The assembly of claim 11 , wherein the inductor comprises a coplanar waveguide inductor.

14. The IC module of claim 1 , wherein the encapsulating material comprises a spun-on polymer.

15. The IC module of claim 1 , wherein the encapsulating material comprises a dielectric molding material.

16. The IC module of claim 1 , wherein the encapsulating material comprises an epoxy-based, heat-curable encapsulating material.

17. The multi-component assembly of claim 11 , wherein the encapsulating material comprises a spun-on polymer.

18. The multi-component assembly of claim 11 , wherein the encapsulating material comprises a dielectric molding material.

19. The multi-component assembly of claim 11 , wherein the encapsulating material comprises an epoxy-based, heat-curable encapsulating material.

Assignments (23)