Image sensor for minimizing a dark current and method for manufacturing the same

1. An image sensor comprising:

readout circuitry over a first substrate;

an electrical junction region comprising a first conduction type ion implantation region in the first substrate and a second conduction type ion implantation region over the first conduction type ion implantation region in the first substrate, the electrical junction region being electrically connected to the readout circuitry;

a first conduction type connection region formed extending through the second conduction type ion implantation layer;

a metal interconnection formed over a second conduction type substrate and electrically connected to the electrical junction region through the first conduction type connection region; and

an image sensing device over and contacting the metal interconnection.

2. The image sensor of claim 1 , wherein the readout circuitry comprises a transistor such that a potential difference exists between a source and a drain in both sides of the transistor.

3. The image sensor of claim 2 , further comprising ion implantation regions including a floating diffusion region in the first substrate, wherein the transistor comprises a transfer transistor and an ion implantation concentration of the source of the transfer transistor is lower than an ion implantation concentration of the floating diffusion region.

4. An image sensor comprising:

readout circuitry over a first substrate;

an electrical junction region comprising a first conduction type ion implantation region in the first substrate and a second conduction type ion implantation region over the first conduction type ion implantation region in the first substrate, the electrical junction region being electrically connected to the readout circuitry;

a first conduction type connection region formed at a side of the electrical junction region and electrically connected to the electrical junction region;

a metal interconnection formed over the first conduction type connection region and contacting the first conduction type connection region; and

an image sensing device over and contacting the metal interconnection.

5. The image sensor of claim 4 , wherein the readout circuitry comprises a first transistor and a second transistor over the first substrate, and the second transistor is disposed between the first conductive type connection region and the electrical junction region.

6. The image sensor of claim 1 , wherein the electrical junction region comprises a PN junction.

7. An image sensor comprising:

a second conduction type substrate;

readout circuitry formed over the second conduction type substrate;

an electrical junction region formed in the second conduction type substrate and electrically connected to the readout circuitry, the electric junction region including a second conduction type well formed in the second conduction type substrate, a first conduction type ion implantation layer formed in the second conduction type well and a second conduction type ion implantation layer formed over the first conduction type ion implantation layer;

a first conduction type connection region formed extending through the second conduction type ion implantation layer;

a metal interconnection formed over the second conduction type substrate and electrically connected to the electrical junction region through the first conduction type connection region; and

an image sensing device formed over the metal interconnection, the image sensing device including a high concentration first conduction type conduction layer formed over and contacting the metal interconnection, a first conduction type conduction layer formed over the high concentration first conduction type conduction layer, and a second conduction type conduction layer formed over the first conduction type conduction layer.