Selective chemical etch method for MRAM freelayers
View Patent ↗An etching process is employed to selectively pattern an exposed magnetic layer of a magnetic thin film structure. The etching process generally includes selectively patterning a magnetic film structure comprises providing a magnetic structure comprising at least one bottom magnetic layer, at least one top magnetic layer, wherein the at least one bottom magnetic layer is separated from the at least one top magnetic layer by a tunnel barrier layer; and selectively etching the top magnetic layer with an etching solution comprising at least one weakly absorbing acid, a surfactant inhibitor soluble in the at least one weakly absorbing acid, and at least one cation additive, wherein etching of the tunnel barrier layer is substantially prevented. In some embodiments, etching solution comprises at least one perfluoroalkane sulfonic acid, an alkylsulfonate salt soluble in the at least one perfluoroalkane sulfonic acid, and at least one cation additive.
1. A process for selectively patterning a magnetic film structure, comprising:
providing a magnetic structure comprising at least one bottom magnetic layer, at least one top magnetic layer, wherein the at least one bottom magnetic layer is separated from the at least one top magnetic layer by a tunnel barrier layer; and
selectively etching the top magnetic layer with an etching solution comprising at least one weakly absorbing acid, a surfactant inhibitor soluble in the at least one weakly absorbing acid, and at least one cation additive, wherein etching of the tunnel barrier layer is substantially prevented.
2. The process of claim 1 , wherein the tunnel barrier layer is Al 2 O 3 .
3. The process of claim 1 , wherein the at least one cation additive is Al +3 and/or Fe +3 .
4. The process of claim 1 , wherein said at least one top magnetic film layer and said at least one bottom magnetic film layer are the same or different, and are Ni x Fe y , Ni x CO y Fe z , wherein x, y and z are any integers whose sum adds up to 100.
5. The process of claim 1 , wherein said at least one top magnetic layer is Ni x Fe y and the at least one bottom magnetic film layer is a stack comprising Ni x Fe y and Co x Fe y .
6. The process of claim 1 , wherein each one of the at least one top and bottom magnetic layers has a thickness of less than 150 Å.
7. The process of claim 1 , wherein said surfactant inhibitor employed is an alkylsulfonic acid salt.
8. The process of claim 1 , wherein said surfactant inhibitor employed is CH 3 (CH 2 ) h SO 3 − Na + , wherein h is an integer from 6 to 14.
9. The process of claim 1 , wherein the concentration of said surfactant inhibitor is at least about 5×10 −6 molar.
10. The process of claim 1 , wherein etching is at a temperature from about 15° C. to about 50° C. for a time period from about 0.5 to about 15 minutes.
11. The process of claim 1 , wherein the at least one weakly adsorbing acid employed is perfluoroalkane sulfonic acid.
12. The process of claim 1 , wherein the at least one weakly adsorbing acid employed is trifluoromethane sulfonic acid.
13. The process of claim 1 , wherein the concentration of said perfluoroalkane sulfonic acid is from about 10 −3 molar to about 1.0 molar.
14. The process of claim 1 , wherein the concentration of said perfluoroalkane sulfonic acid is from about 5×10 −3 molar to about 5×10 −2 molar.
15. The process of claim 1 , wherein the at least one weakly absorbing acid is of a formula CF 3 (CF 2 ) n SO 3 H or (CF 2 ) m (SO 3 H) 2 , wherein n can be zero or any integer from 1 to 6, m can be any integer from 1 to 6, and the F atom can be optionally substituted by —NH 2 .
16. The process of claim 1 , wherein the at least one cation additive is selected from the group consisting of Al +3 , Fe +3 , Gd +3 , Cr +3 , Ce +3 , Ga +3 , La +3 , Sm +3 and combinations comprising at least one of the foregoing cations.
17. A process for selectively patterning a magnetic film structure, comprising:
providing a magnetic structure comprising at least one bottom magnetic layer, at least one top magnetic layer, wherein the at least one bottom magnetic layer is separated from the at least one top magnetic layer by a tunnel barrier layer; and
selectively etching the top magnetic layer with an etching solution comprising at least one perfluoroalkane sulfonic acid, an alkylsulfonate salt soluble in the at least one perfluoroalkane sulfonic acid, and at least one cation additive selected to replace bound protons on a surface of the tunnel barrier layer, wherein etching of the tunnel barrier layer is substantially prevented.
18. The process of claim 17 , wherein the tunnel barrier layer is an aluminum oxide.
19. The process of claim 17 , wherein the at least one top magnetic film layer and the at least one bottom magnetic film layer are the same or different, and are Ni x Fe y , Ni x CO y Fe z , wherein x, y and z are any integers whose sum adds up to 100.
20. The process of claim 17 , wherein the perfluoroalkane sulfonic acid is of a formula CF 3 (CF 2 ) n SO 3 H or (CF 2 ) m (SO 3 H) 2 , wherein n can be zero or any integer from 1 to 6, m can be any integer from 1 to 6, and the F atom can be optionally substituted by —NH 2 .
21. The process of claim 17 , wherein the alkylsulfonate salt soluble in the at least one perfluoroalkane sulfonic acid is of a formula CH 3 (CH 2 ) h SO 3 − M + , wherein h is an integer from 6 to 14.
22. The process of claim 17 , wherein the at least one cation additive is selected from the group consisting of Al +3 , Fe +3 , Gd +3 , Cr +3 , Ce +3 , Ga +3 , La +3 , Sm +3 and combinations comprising at least one of the foregoing cations.