Method for manufacturing semiconductor device
View Patent ↗A burn-in input signal input to a burn-in circuit is delivered to an internal circuit through a selector. In response to a control signal from the burn-in circuit, the selector selects either the burn-in input signal or an input signal for operating the internal circuit. In the burn-in test process, a portion of an output signal is monitored to determine the degree of degradation of the internal circuit.
1. A method for manufacturing a semiconductor device, comprising:
arranging a semiconductor device, a burn-in test device, and a burn-in board to test said semiconductor device by use of said burn-in test device and said burn-in board, wherein said burn-in board has a first socket having fewer contact pins than there are terminals on said semiconductor device;
electrically connecting at least one of said terminals to at least one of said contact pins;
supplying a burn-in input signal from said burn-in test device to said semiconductor device to perform a burn-in test;
monitoring a portion of an output signal from said semiconductor device to determine a degree of degradation associated with said semiconductor device;
arranging an electrical characteristic test device and a test substrate, after the completion of said burn-in test, to test said semiconductor device using said electrical characteristic test device and said test substrate, wherein said test substrate has a second socket having fewer contact pins than there are terminals on said semiconductor device;
electrically connecting a plurality of said terminals to a plurality of said contact pins of said second socket; and
supplying an input signal from said electrical characteristic test device to said semiconductor device to perform an electrical characteristic test.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the number of contact pins of said first socket is equal to the sum of the numbers of burn-in input terminals, power supply terminals, ground terminals, and monitoring output terminals provided on said semiconductor device.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein:
non-connecting terminals are provided at the four corners of said substrate; and
said first socket has no contact pins for connection to said non-connecting terminals.
4. The method for manufacturing a semiconductor device according to claim 3 , wherein said second socket has no contact pins for connection to said non-connecting terminals.