Method for manufacturing semiconductor device
View Patent ↗Embodiments relate to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device capable of simplifying a silicide manufacturing process using a photo resist overhang structure. According to embodiments, a surface is subjected to a monochlorobenzene coating processing to cure the surface of the exposed photo resist so as not to react with developing solution and such a processed photo resist is developed to make the lower of the photo resist in the overhang structure so as to form an accurate pattern according to the clear removal of the oxide film, making it possible to simply manufacture the silicide and the non-silicide without performing an etching process by a subsequent cobalt deposition process.
1. A method comprising:
forming a gate and forming a gate spacer on a side wall of the gate over a semiconductor substrate including a silicide region and a non-silicide region;
forming a first oxide film over the semiconductor substrate including the gate and the gate spacer;
forming a photo resist pattern in an overhang structure on the first oxide film in the silicide region to expose the first oxide film in the non-silicide region;
forming a second oxide film over the semiconductor substrate including the photo resist pattern;
removing the second oxide film from the photo resist pattern in the silicide region while maintaining the second oxide film over the first oxide film in the non-silicide region; and then
removing the first oxide film to expose an upper surface of the gate and the semiconductor substrate of the silicide region while maintaining the first oxide film in the non-silicide region.
2. The method of claim 1 , wherein removing the second oxide film from the silicide region comprises stripping the photo resist pattern.
3. The method of claim 1 , wherein forming the photo resist pattern in the overhang structure comprises:
selectively exposing a photo resist film in the non-silicide region through a mask;
performing a monochlorobenzene (MCB) coating process on the selectively exposed photo resist film; and
forming the photo resist pattern in the overhang structure exposing the non-silicide region by developing the photo resist film subjected to the MCB coating process.
4. The method of claim 3 , wherein an exposure energy is in a range of approximately 300 mJ to 450 mJ when selectively exposing the photo resist film through a mask so as to form an undercut on a lower portion of the photo resist pattern.
5. The method of claim 3 , wherein a surface of the exposed photo resist film is reformed and cured when performing the monochlorobenzene coating process.
6. The method of claim 5 , wherein the surface of the exposed photo resist film does not react with a developing solution.
7. The method of claim 1 , wherein the first oxide film compromises a silicon oxide film deposited with a chemical vapor deposition (CVD) process.
8. The method of claim 1 , wherein a depositing thickness of the second oxide film is between approximately 50 Å to 200 Å.
9. The method of claim 1 , wherein the second oxide film is formed using a low temperature oxide process.
10. The method of claim 1 , wherein the overhang structure of the photo resist pattern has a form that a lower portion of photo resist coating film is removed so as to be recessed and an upper portion thereof is substantially projected toward a side portion.
11. The method of claim 1 , wherein the second oxide film over the photo resist pattern is removed when the photo resist pattern is stripped.
12. The method of claim 1 , wherein the second oxide film is formed to have a gap at a side of the photo resist pattern.