APPARATUS AND METHOD FOR CONTACT FORMATION IN SEMICONDUCTOR DEVICES
The present disclosure is directed to the preparation of a semiconductor substrate, and metallization of a contact area on the substrate to produce a contact in a semiconductor device. The method includes pre-treating the substrate by ultra fast laser treatment of a contact area, and depositing an interconnect metal layer on the contact area to create a contact. The process may include depositing a layer of dielectric-forming material on the substrate and removing a portion of the dielectric material from the substrate to reveal a contact area, prior to laser treating and metallization.
1 . A method for forming electrical contacts in a semiconductor device, comprising:
forming a set of active circuit elements within a semiconductor device;
applying at least one dielectric layer onto said active circuit elements;
forming apertures in said at least one dielectric layer to expose portions of said active circuit elements;
irradiating at least said exposed portions of said active circuit elements with a pulsed source of radiation creating a textured surface on said exposed portions, said irradiation performed in a dopant environment wherein said exposed portions are doped; and
applying a conductive material within said apertures to contact said portions of said active circuit elements that were exposed to said radiation.
2 . The method of claim 1 , further comprising bonding said conductive material with said portions of said active circuit elements that were exposed to said radiation.
3 . The method of claim 1 , said irradiating comprising irradiating with a pulsed laser source.
4 . The method of claim 1 , said forming a set of active circuit elements comprising forming a set of doped semiconductor regions within said device to be used as active circuit elements.
5 . The method of claim 1 , further comprising applying a protective layer to at least some areas of said device to protect said areas from unwanted exposure to said radiation.
6 . The method of claim 5 , further comprising removing said protective layer following said irradiating step.
7 . (canceled)
8 . An article of manufacture manufactured and arranged using the following elements and process, the article comprising:
a semiconductor substrate;
at least one active circuit element disposed on or in said substrate;
a dielectric layer disposed over said semiconductor substrate and active circuit element;
an aperture within said dielectric layer providing connection access to said underlying active circuit element; and
a conductive material disposed within said aperture and providing an electrical connection to a laser-doped textured surface portion of said active circuit element, said laser-doped textured surface portion being formed by application of pulsed laser radiation in a dopant environment to said portion of said active circuit element by way of said aperture prior to disposing said conductive material within said aperture.
9 . The article of claim 8 , said at least one active circuit element comprising a portion of said semiconductor substrate.
10 . (canceled)
11 . The article of claim 8 , said dielectric layer comprising an oxide layer.
12 . The article of claim 8 , said dielectric layer comprising a nitride layer.
13 . The article of claim 8 , further comprising a protective mask layer configured to protect at least some portions of said article from unwanted exposure to said laser radiation.
14 . The article of claim 8 , said conductive material comprising a metal.
15 . The article of claim 8 , said pulsed laser radiation comprising femtosecond pulsed laser radiation.