Semiconductor device
View Patent ↗A semiconductor device includes first underlying lines in an underlying wiring layer electrically connected to and shaped like a first semiconductor region, second underlying lines in the underlying wiring layer electrically connected to and shaped like a second semiconductor region, a first intermediate line in an intermediate wiring layer electrically connected to the first underlying lines, the first intermediate line including finger regions shaped like the first underlying lines, a coupling section to electrically interconnect the finger regions, a second intermediate line in the intermediate wiring layer electrically connected to the second underlying lines, the second intermediate line including finger regions shaped like the second underlying lines, and a coupling section to electrically connect the finger regions, a first overlying line in an overlying wiring layer electrically connected to the first intermediate line, and a second overlying line in the overlying wiring layer electrically connected to the second intermediate line.
1. A semiconductor device, comprising:
a plurality of first underlying lines in an underlying wiring layer electrically connected to and shaped similar to a first semiconductor region;
a plurality of second underlying lines in the underlying wiring layer electrically connected to and shaped similar to a second semiconductor region;
a first intermediate line in an intermediate wiring layer electrically connected to the plurality of first underlying lines, the first intermediate line including a plurality of finger regions shaped similarly to the plurality of first underlying lines, and a coupling section to electrically connect the finger regions with each other;
a second intermediate line in the intermediate wiring layer electrically connected to the plurality of second underlying lines, the second intermediate line including a plurality of finger regions shaped similarly to the plurality of second underlying lines, and a coupling section to electrically connect the finger regions with each other;
a first overlying line in an overlying wiring layer electrically connected to the first intermediate line; and
a second overlying line in the overlying wiring layer electrically connected to the second intermediate line.
2. The semiconductor device according to claim 1 , further including a power transistor.
3. The semiconductor device according to claim 2 , wherein
the plurality of first and second underlying lines are strip-shaped.
4. The semiconductor device according to claim 3 , wherein
the first and second regions are alternately disposed; and
the finger region of the first intermediate line and the finger regions of the second intermediate line are staggered with each other.
5. The semiconductor device according to claim 2 , wherein
the first and second overlying lines are rectangular-shaped and formed over substantially a half of the first and second semiconductor regions respectively.
6. The semiconductor device according to claim 2 , wherein
the first and second semiconductor regions are source and drain regions, respectively.
7. The semiconductor device according to claim 2 , wherein
the first and second semiconductor regions are emitter and collector regions, respectively.
8. The semiconductor device according to claim 1 , wherein
the coupling section of the first intermediate lines has a length equivalent to about a half of a length of the first intermediate lines in a first direction along which the first intermediate lines extends.
9. The semiconductor device according to claim 1 , wherein
when an given one of the first underlying lines has a length of T in the first direction, and a length of S in a second direction orthogonal to the first direction, the first intermediate line has a portion longer than the length S in the second direction.
10. The semiconductor device according to claim 9 , wherein
the first intermediate line is shorter than the length T in the first direction.
11. The semiconductor device according to claim 1 , wherein
when attention is given only to an area immediately above an given one of the first underlying lines, contacts between the first intermediate and first overlying lines are fewer in number than contacts between the first underlying and first intermediate lines.
12. The semiconductor device according to claim 1 , wherein
the first intermediate line has both a pattern similar to the first underlying lines and a pattern similar to the first overlying line.