nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer
An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.
1. A detector comprising:
an absorption layer for generating electrons-hole pairs in response to absorbed photons, the absorption layer comprising a semiconductor having majority carriers and minority carriers;
a barrier layer comprising a semiconductor adjacent to the absorption layer to provide a barrier to the majority carriers, the barrier layer comprising a concentration gradient; and
a contact layer comprising a semiconductor adjacent to the barrier layer.
2. The detector as set forth in claim 1 , wherein the absorption layer and the contact layer are n-type semiconductors so that the majority carriers are electrons and the minority carriers are holes.
3. The detector as set forth in claim 2 , the barrier layer comprising As and having a concentration gradient in As so that the concentration of As increases in a direction from the absorption layer to the contact layer.
4. The detector as set forth in claim 3 , the barrier layer comprising AlAsSb.
5. The detector as set forth in claim 4 , the absorption layer and the contact layer comprising InAs.
6. The detector as set forth in claim 1 , the absorption layer, the barrier layer, and the contact layer each having a band for conduction of the minority carriers, the concentration gradient such that the band is aligned across the barrier layer and the contact layer.
7. A detector comprising:
an absorption layer for generating electrons-hole pairs in response to absorbed photons, the absorption layer comprising a semiconductor having majority carriers and minority carriers, the absorption layer comprising a chirped strained layer super lattice to generate electron-hole pairs in response to the absorbed photons;
a barrier layer comprising a semiconductor adjacent to the absorption layer to provide a barrier to the majority carriers; and
a contact layer comprising a semiconductor adjacent to the barrier layer.
8. The detector as set forth in claim 7 , wherein the absorption layer and the contact layer are n-type semiconductors so that the majority carriers are electrons and the minority carriers are holes.
9. The detector as set forth in claim 8 , the absorption layer comprising InAs and GaSb layers to form the chirped strained layer super lattice, the chirped strained layer super lattice comprising groups of InAs and GaSb layers where each group comprises a plurality of alternating layers of InAs and GaSb, wherein the thicknesses of the InAs and GaSb layers decrease from group to group along a direction toward the barrier layer.
10. The detector as set forth in claim 9 , the barrier layer comprising AlSbAs.
11. The detector as set forth in claim 10 , the contact layer comprising InAs.
12. The detector as set forth in claim 7 , the absorption layer, the barrier layer, and the contact layer each having a band for conduction of the minority carriers, where the thicknesses of the InAs and GaSb are such that the band is aligned across the barrier layer and the contact layer.