Apparatus for testing printed circuit and method therefor
An apparatus comprises a sensor, a power supply and a measurer. The sensor is placed over the electronic component. The power supply can supply electric power to the printed circuit; thereby the printed circuit is powered on. The measurer can measure a sensing signal through the sensor when the printed circuit is powered on.
1. An apparatus for testing a power circuit including at least one metal-oxide-semiconductor (MOS), the apparatus comprising:
a sensor placed over the MOS;
a power supply for supplying electric power to the power circuit, so that the power circuit is powered on and the MOS is driven;
a measurer for measuring a sensing signal corresponding to a state of the MOS through the sensor when the power circuit is powered on;
a detecting module for detecting a peak-to-peak voltage from the sensing signal corresponding to the state of the MOS;
another detecting module for detecting a duty ratio of the sensing signal corresponding to the state of the MOS;
a calculating module for calculating a root mean square voltage according to the sensing signal corresponding to the state of the MOS; and
a sampling module for sampling a waveform of the sensing signal corresponding to the state of the MOS.
2. The apparatus as claimed in claim 1 , further comprising:
a memory for preloading a predetermined limit; and
a monitor for indicating an error condition whenever the sensing signal is not within the predetermined limit.
3. The apparatus as claimed in claim 1 , further comprising:
a first storing module for preloading a predetermined peak-to-peak voltage limit; and
a first indicating module for indicating a first different state whenever the peak-to-peak voltage is not within the predetermined peak-to-peak voltage limit.
4. The apparatus as claimed in claim 3 , further comprising:
a second storing module for preloading a predetermined duty ratio limit; and
a second indicating module for indicating a second different state whenever the duty ratio is not within the predetermined duty ratio limit.
5. The apparatus as claimed in claim 4 , further comprising:
a third storing module for preloading a predetermined root mean square voltage limit; and
a third indicating module for indicating a third different state whenever the root mean square voltage is not within the predetermined root mean square voltage limit.
6. The apparatus as claimed in claim 5 , further comprising:
a fourth storing module for preloading a predetermined waveform limit; and
a fourth indicating module for indicating a fourth different state whenever the waveform is not within the predetermined waveform limit.
7. A method for testing a power circuit including at least one metal-oxide-semiconductor (MOS) the method comprising:
placing a sensor over the MOS;
supplying electric power to the power circuit, so that the power circuit is powered on and the MOS is driven;
measuring a sensing signal corresponding to a state of the MOS through the sensor when the power circuit is powered on;
detecting a peak-to-peak voltage from the sensing signal corresponding to the state of the MOS;
detecting a duty ratio of the sensing signal corresponding to the state of the MOS;
calculating a root mean square voltage according to the sensing signal corresponding to the state of the MOS; and
sampling a waveform of the sensing signal corresponding to the state of the MOS.
8. The method as claimed in claim 7 , further comprising:
preloading a predetermined limit; and
indicating an error condition whenever the sensing signal is not within the predetermined limit.
9. The method as claimed in claim 7 , further comprising:
preloading a predetermined peak-to-peak voltage limit; and
indicating a first different state whenever the peak-to-peak voltage is not within the predetermined peak-to-peak voltage limit.
10. The method as claimed in claim 7 , further comprising:
preloading a predetermined duty ratio limit; and
indicating a second different state whenever the duty ratio is not within the predetermined duty ratio limit.
11. The method as claimed in claim 7 , further comprising:
preloading a predetermined root mean square voltage limit; and
indicating a third different state whenever the root mean square voltage is not within the predetermined root mean square voltage limit.
12. The method as claimed in claim 7 , further comprising:
preloading a predetermined waveform limit; and
indicating a fourth different state whenever the waveform is not within the predetermined waveform limit.