Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes a pattern layer formed on and/or over a semiconductor substrate, a fluorine-diffusion barrier layer containing a silicon-doped silicon oxide formed on and/or over the pattern layer, and an interlayer dielectric layer containing fluorine formed on and/or over the fluorine-diffusion barrier layer.
1. A semiconductor device comprising:
a pattern layer formed over a semiconductor substrate;
a fluorine-diffusion barrier layer containing a silicon-doped oxide material formed over the pattern layer; and
an interlayer dielectric layer containing fluorine formed over the fluorine-diffusion barrier layer.
2. The semiconductor device of claim 1 , wherein the fluorine-diffusion barrier layer has a thickness in a range between approximately 250 Å to 350 Å.
3. The semiconductor device of claim 1 , further comprising an insulating layer composed of silicon oxide (SiO 2 ) formed between the semiconductor substrate and the pattern layer.
4. The semiconductor device of claim 1 , wherein the pattern layer comprises a metal pattern layer.
5. The semiconductor device of claim 4 , wherein the metal pattern layer comprises one of aluminum (Al), tungsten (W), and copper (Cu).
6. The semiconductor device of claim 1 , wherein the pattern layer comprises an insulating pattern layer.
7. The semiconductor device of claim 6 , wherein the insulating pattern layer comprises tetra ethyl ortho silicate (TEOS).
8. The semiconductor device of claim 1 , wherein the silicon-doped oxide material comprises silicon oxide (SiO 2 ).
9. The semiconductor device of claim 1 , wherein the silicon doped oxide material is also doped with nitrogen ions.
10. The semiconductor device of claim 1 , wherein the interlayer dielectric (ILD) layer comprises fluorinated silicon oxide (SiOF).