Metal capacitor and method of making the same
View Patent ↗A method of making a metal capacitor includes the following steps. A dielectric layer having a metal interconnection and a capacitor electrode is provided. Then, a treatment is performed to increase the dielectric constant of the dielectric layer surrounding the capacitor electrode. The treatment can be UV radiation, a plasma treatment or an ion implantation. Accordingly, the metal capacitor will have a higher capacitance and RC delay between the metal interconnection and the dielectric layer can be prevented.
1. A method of forming a metal capacitor, comprising:
providing a dielectric layer having a first region and a second region;
after forming the dielectric layer forming a dual damascene metal interconnection in the first region and forming a damascene capacitor electrode in the second region, and forming a cap layer over both dielectric layer regions; and
performing a treatment on the dielectric layer while the cap layer remains in the second region to make a dielectric constant of the dielectric layer in the second region higher than a dielectric constant of the dielectric layer in the first region.
2. The method of claim 1 , wherein the treatment comprises a UV radiation, a plasma treatment or an ion implantation.
3. The method of claim 2 , wherein the dielectric constant of the dielectric layer in the second region can be adjusted by controlling duration of the treatment, energy of the treatment or dosage of the treatment.
4. The method of claim 1 , wherein the treatment is performed after the metal interconnection and the capacitor electrode are formed.
5. The method of claim 1 , wherein the treatment is performed after a mask is formed on the first region and the second region is exposed through the mask.
6. The method of claim 1 , wherein the dielectric layer further comprises a third region, and the treatment is performed on the dielectric layer in the third region and the dielectric layer in the second region simultaneously to improve the mechanical strength of the dielectric layer in the third region.
7. The method of claim 6 , wherein the third region comprises a non-critical region.
8. The method of claim 1 , wherein a cap layer is positioned on the metal interconnection.
9. The method of claim 1 , wherein the capacitor electrode and the dielectric layer in the second region constitute a metal-oxide-metal (MOM) capacitor.