Granted Patent B2

US 7,994,414 · App. 12/264,285 · Granted Aug 9, 2011

Abstract

Claims (21)

1. A semiconductor device, comprising:

a source/drain conductor formed of a line of metal material on a substrate;

a first gate conductor formed of a second line of metal material, wherein the first gate conductor is disposed adjacent a first portion of the source/drain conductor at one end of the source/drain conductor; and

a second gate conductor formed of a third line of metal material, wherein the second gate conductor is disposed adjacent a second portion of the source/drain conductor at the other end of the source/drain conductor,

wherein the first gate conductor and the second gate conductor are supplied with a same current from a single circuit, or supplied each with a different current from different circuits, and

wherein the semiconductor device satisfies at least one condition of the group consisting of:

(a) the first gate conductor d the second gate conductor are formed of materials with different temperature constants such that the first gate conductor has a different temperature constant than the second gate conductor,

(b) the first gate conductor and the second gate conductor are formed having different sizes, and

(c) the first gate conductor and the second gate conductor are formed spaced apart from the source/drain conductor by different intervals.

2. The semiconductor device according to claim 1 , wherein the first gate conductor and the second gate conductor are disposed spaced apart from each other along a same side of the source/drain conductor.

3. The semiconductor device according to claim 1 , wherein the first gate conductor and the second gate conductor are arranged orthogonally about the source/drain conductor.

4. The semiconductor device according to claim 3 , wherein the first gate conductor is disposed on a same horizontal plane as the source/drain conductor, and wherein the second gate conductor is disposed on a same vertical plane as the source/drain conductor.

5. The semiconductor device according to claim 4 , wherein the second gate conductor is spaced apart from a top surface of the source/drain conductor by approximately the same distance as the first gate conductor is spaced apart from a side surface of the source/drain conductor.

6. The semiconductor device according to claim 4 , further comprising a first insulating layer upon which the first gate conductor and the source/drain conductor are formed; and a second insulating layer on the first gate conductor and the source/drain conductor, the second gate conductor being formed in the second insulating layer.

7. The semiconductor device according to claim 6 , wherein the first insulating layer and the second insulating layer comprise different material.

8. The semiconductor device according to claim 6 , wherein at least one of the first insulating layer and the second insulating layer comprises material with a thermal transfer constant.

9. The semiconductor device according to claim 6 , wherein a thickness of the second insulating layer is equal to or larger than a thickness of the second gate conductor.

10. The semiconductor device according to claim I, wherein the source/drain conductor is arranged as a straight line and at least one of the first gate conductor and the second gate conductor is arranged as a bent line in an “n” shape.

11. The semiconductor device according to claim 1 , wherein the source/drain conductor, the first gate conductor, and the second gate conductor are arranged in parallel on a single insulating layer.

12. The semiconductor device according to claim 11 , wherein the single insulating layer comprises material with a thermal transfer constant.

13. The semiconductor device according to claim 11 , wherein the single insulating layer is formed of a conductor having a thickness of between about 10 nm to about 20 nm.

Assignments (6)