Structuring method
A method of structuring multicrystalline silicon surfaces comprises the provision of a texturing solution, the application of the texturing solution to a surface of a semiconductor substrate to be structured and the heating of the texturing solution to a texturing temperature, wherein the texturing solution comprises at least a portion of phosphoric acid.
1. A method of structuring multicrystalline silicon surfaces, the method comprising the following steps:
providing a texturing solution;
applying the texturing solution to a surface of a semiconductor substrate to be structured;
heating the texturing solution to a texturing temperature,
wherein the texturing solution comprises at least a portion of phosphoric acid,
wherein the texturing temperature amounts to at least 200° C., and
wherein the texturing solution comprises at least a portion of at least one of pyrophosphoric acid and metaphosphoric acid.
2. A method according to claim 1 , wherein the texturing solution consists of pure phosphoric acid.
3. A method according to claim 1 , wherein the phosphoric acid has a concentration of at least 70%.
4. A method according to claim 1 , wherein the phosphoric acid has a concentration of at least 80%.
5. A method according to claim 1 , wherein the phosphoric acid has a concentration of at least 85%.
6. A method according to claim 1 , wherein the texturing temperature amounts to at least 250° C.
7. A method according to claim 1 , wherein the texturing temperature amounts to at least 300° C.
8. A method according to claim 1 , wherein the texturing temperature amounts to more than 300° C.
9. A method according to claim 1 , wherein the texturing temperature amounts to at least 310° C.
10. A method according to claim 1 , wherein the texturing temperature amounts to at least 350°.