IP Library Granted Patent US 8,216,979
Granted Patent B2
US 8,216,979 · App. 12/278,369 · Granted Jul 10, 2012

Method of manufacturing superconducting thin film material, superconducting device and superconducting thin film material

Assignees: Sumitomo Electric Industries, Ltd.; International Superconducticvity Technology Center
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,216,979
App. No.
12/278,369
Granted
Jul 10, 2012
Kind
B2
Abstract

A method of manufacturing a superconducting thin film material includes a vapor phase step of forming a superconducting layer by a vapor phase method and a liquid phase step of forming a superconducting layer by a liquid phase method so that the latter superconducting layer is in contact with the former superconducting layer. Preferably, the method further includes the step of forming an intermediate layer between the former superconducting layer and a metal substrate. The metal substrate is made of a metal, and preferably the intermediate layer is made of an oxide having a crystal structure of any of rock type, perovskite type and pyrochlore type, and the former superconducting layer and the latter superconducting layer both have an RE123 composition. Accordingly, the critical current value can be improved.

Claims (8)

1. A method of manufacturing a superconducting thin film material, comprising:

n vapor phase steps, n is an integer of at least 2, each for forming a vapor phase growth superconducting layer by a pulsed laser deposition method; and

n liquid phase steps each for forming a liquid phase growth superconducting layer by a metal organic deposition method, wherein

in a first vapor phase step of said n vapor phase steps, a first vapor phase growth superconducting layer is formed,

in a first liquid phase step of said n liquid phase steps, a first liquid phase growth superconducting layer is formed so that the first liquid phase growth superconducting layer is in contact with said first vapor phase growth superconducting layer,

in a k-th vapor phase step, k is an integer satisfying n≧k≧2, of said n vapor phase steps, a k-th vapor phase growth superconducting layer is formed so that the k-th vapor phase growth superconducting layer is in contact with a (k−1)-th liquid phase growth superconducting layer, and

in a k-th liquid phase step of said n liquid phase steps, a k-th liquid phase growth superconducting layer is formed so that the k-th liquid phase growth superconducting layer is in contact with the k-th vapor phase growth superconducting layer.

2. The method of manufacturing the superconducting thin film material according to claim 1 , further comprising the step of forming a superconducting layer after said n-th liquid phase step so that the superconducting layer is in contact with said n-th liquid phase growth superconducting layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2016
From: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 038896/0940 →
CHANGE OF NAME Recorded Jun 4, 2012
From: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
To: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
Reel/Frame 028317/0449 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 5, 2008
From: HAHAKURA, SHUJI; OHMATSU, KAZUYA; UEYAMA, MUNETSUGU; HASEGAWA, KATSUYA
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.; INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
Reel/Frame 021342/0755 →
Priority Claims (1)
JP 2006-039395 · Feb 16, 2006 · national
Continuity (1)
Related Publication 20090239753A1 · Sep 24, 2009