Method and apparatus for imaging utilizing an ultrasonic imaging sensor array
View Patent ↗The subject invention pertains to a piezoelectric device structure for improved acoustic wave sensing and/or generation, and process for making same. The piezoelectric thin film field effect transducer can be a thin film transistor (TFT) with either a piezoelectric film gate or a composite gate having a dielectric film and a piezoelectric film. The TFT structure can be either a top gate device or a bottom gate device. In an embodiment, the piezoelectric device structure can be used to form an array of piezoelectric thin film field effect transducers. A TFT switch can drive each piezoelectric transducer in the array. The piezoelectric transducers can both generate and sense acoustic waves. In a sensing mode, a signal from an acoustic wave can be collected at a readout terminal of the piezoelectric transducer. In a generating mode, an excitation signal can be applied across the piezoelectric transducer while the switch is ‘on’.
1. A device for acoustic wave sensing and/or generation, comprising:
a thin film transistor formed on a substrate, wherein the thin film transistor comprises:
an excitation electrode;
a semiconductor thin film in contact with the excitation electrode;
an active region in the semiconductor thin film;
a gate region comprising a piezoelectric layer, wherein the gate region is in contact with the active region;
a gate electrode, wherein the gate electrode is in electrical contact with the piezoelectric layer, wherein at least a portion of the piezoelectric layer is between the gate electrode and the semiconductor thin film, wherein the gate region and the gate electrode define a source region and drain region;
a source electrode, wherein the source electrode is in electrical contact with the source region; and
a drain electrode, wherein the drain electrode is in electrical contact the drain region.
2. The device according to claim 1 ,
wherein the gate region comprises a dielectric layer, wherein the dielectric layer is positioned between the semiconductor thin film and the piezoelectric layer.
3. The device according to claim 1 ,
wherein the device further comprises:
a means for putting the thin film transistor in active mode; and
a means for applying an excitation signal to the excitation electrode,
wherein the thin film transistor is configured such that acoustic waves are generated by the application of the excitation signal to the excitation electrode while the thin film transistor is in active mode.
4. The device according to claim 1 ,
wherein the device further comprises:
a means for putting the thin film transistor in active mode, and
a means for monitoring a voltage of the drain electrode,
wherein the thin film transistor is configured such that acoustic waves are sensed by monitoring the voltage of the drain electrode while the thin film transistor is in active mode.
5. The device according to claim 3 , further comprising:
a means for monitoring a voltage of the drain electrode after application of the excitation signal to the excitation electrode,
wherein the thin film transistor is configured such that acoustic waves are sensed by monitoring the voltage of the drain electrode, while the thin film transistor is in active mode.
6. The device according to claim 1 , further comprising:
at least one additional thin film transistor formed on the substrate,
wherein each of the at least one additional thin film transistors comprises:
an excitation electrode;
a semiconductor thin film in contact with the excitation electrode;
an active region in the semiconductor thin film;
a gate region comprising a piezoelectric layer, wherein the gate region is in contact with the active region;
a gate electrode, wherein the gate electrode is in electrical contact with the piezoelectric layer, wherein at least a portion of the piezoelectric layer is between the gate electrode and the semiconductor thin film, wherein the gate region and the gate electrode define a source region and drain region;
a source electrode, wherein the source electrode is in electrical contact with the source region; and
a drain electrode, wherein the drain electrode is in electrical contact the drain region.
7. The device according to claim 6 ,
wherein the at least one additional thin film transistor formed on the substrate comprises at least three additional thin film transistors,
wherein the thin film transistor and the at least three additional thin film transistors are positioned to form an array of thin film transistors.
8. The device according to claim 1 , further comprising a thin film transistor switch, wherein the thin film transistor switch drives the thin film transistor.
9. The device according to claim 7 , further comprising:
a thin film transistor switch, wherein the thin film transistor switch drives the thin film transistor; and
a corresponding at least three additional thin film transistor switches, wherein each of the corresponding at least three additional thin film transistor switches drives a corresponding one of the at least three thin film transistors.
10. The device according to claim 1 ,
wherein the excitation electrode is positioned on the substrate,
wherein the semiconductor thin film is deposited on the substrate and over the excitation electrode,
wherein the gate region is on the active region.
11. The device according to claim 1 ,
wherein the gate electrode is positioned on the substrate, wherein the piezoelectric layer is deposited on the substrate and over the gate electrode, wherein the excitation electrode is on the active region.
12. The device according to claim 1 ,
wherein the excitation electrode is substantially parallel with the gate electrode.
13. A method for generating and/or sensing acoustic waves, comprising:
providing a thin film transistor formed on a substrate, wherein the thin film transistor comprises:
an excitation electrode;
a semiconductor thin film in contact with the excitation electrode;
an active region in the semiconductor thin film;
a gate region comprising a piezoelectric layer, wherein the gate region is in contact with the active region;
a gate electrode, wherein the gate electrode is in electrical contact with the piezoelectric layer, wherein at least a portion of the piezoelectric layer is between the gate electrode and the semiconductor thin film, wherein the gate region and the gate electrode define a source region and drain region;
a source electrode, wherein the source electrode is in electrical contact with the source region; and
a drain electrode, wherein the drain electrode is in electrical contact the drain region;
applying an excitation signal to the excitation electrode of the thin film transistor while the thin film transistor is in active mode, wherein applying the excitation signal to the excitation electrode of the thin film transistor generates acoustic waves.
14. The method according to claim 13 , further comprising,
monitoring a voltage of the drain electrode of the thin film transistor while the thin film transistor is in active mode, wherein monitoring a voltage at the drain electrode of the thin film transistor senses acoustic waves.
15. A method for generating and/or sensing acoustic waves, comprising:
providing a thin film transistor formed on a substrate, wherein the thin film transistor comprises:
an excitation electrode;
a semiconductor thin film in contact with the excitation electrode;
an active region in the semiconductor thin film;
a gate region comprising a piezoelectric layer, wherein the gate region is in contact with the active region;
a gate electrode, wherein the gate electrode is in electrical contact with the piezoelectric layer, wherein at least a portion of the piezoelectric layer is between the gate electrode and the semiconductor thin film, wherein the gate region and the gate electrode define a source region and drain region;
a source electrode, wherein the source electrode is in electrical contact with the source region; and
a drain electrode, wherein the drain electrode is in electrical contact the drain region;
monitoring a voltage of the drain electrode of the thin film transistor while the thin film transistor is in active mode, wherein monitoring a voltage at the drain electrode of the thin film transistor senses acoustic waves.
16. The device according to claim 13 ,
wherein the gate region comprises a dielectric layer, wherein the dielectric layer is positioned between the semiconductor thin film and the piezoelectric layer.
17. The method according to claim 15 ,
wherein monitoring the voltage of the drain electrode comprises monitoring the voltage of the drain electrode after application of the excitation signal to the excitation electrode.
18. The method according to claim 13 , further comprising:
providing at least one additional thin film transistor formed on the substrate,
wherein each of the at least one additional thin film transistors comprises:
an excitation electrode;
a semiconductor thin film in contact with the excitation electrode;
an active region in the semiconductor thin film;
a gate region comprising a piezoelectric layer, wherein the gate region is in contact with the active region;
a gate electrode, wherein the gate electrode is in electrical contact with the piezoelectric layer, wherein at least a portion of the piezoelectric layer is between the gate electrode and the semiconductor thin film, wherein the gate region and the gate electrode define a source region and drain region;
a source electrode, wherein the source electrode is in electrical contact with the source region; and
a drain electrode, wherein the drain electrode is in electrical contact the drain region; and
applying at least one excitation signal to the corresponding at least one additional excitation electrode of the at least one additional thin film transistor, while the at least one additional thin film transistor is in active mode, wherein applying the at least one additional excitation signal to the corresponding at least one additional excitation electrode of the at least one additional thin film transistor generates a corresponding at least one additional acoustic waves.
19. The method according to claim 18 ,
wherein providing the at least one additional thin film transistor formed on the substrate comprises providing at least three additional thin film transistors,
wherein the thin film transistor and the at least three additional thin film transistors are positioned to form an array of thin film transistors.
20. The method according to claim 13 , further comprising:
providing a thin film transistor switch, and
driving the thin film transistor with the thin film transistor switch.
21. The method according to claim 19 , further comprising:
providing a thin film transistor switch,
driving the thin film transistor with the thin film transistor switch;
providing a corresponding at least three additional thin film transistor switches, and
driving each of the corresponding at least three additional thin film transistors with a corresponding one of the at least three thin film transistors.
22. The method according to claim 13 ,
wherein the excitation electrode is positioned on the substrate,
wherein the semiconductor thin film is deposited on the substrate and over the excitation electrode,
wherein the gate region is on the active region.
23. The method according to claim 13 ,
wherein the gate electrode is positioned on the substrate, wherein the piezoelectric layer is deposited on the substrate and over the gate electrode, wherein the excitation electrode is on the active region.
24. The method according to claim 13 ,
wherein the excitation electrode is substantially parallel with the gate electrode.
25. The device according to claim 2 ,
wherein the device further comprises:
a means for putting the thin film transistor in active mode; and
a means for applying an excitation signal to the excitation electrode,
wherein the thin film transistor is configured such that acoustic waves are generated by the application of the excitation signal to the excitation electrode while the thin film transistor is in active mode.
26. The device according to claim 2 ,
wherein the device further comprises:
a means for putting the thin film transistor in active mode, and
a means for monitoring a voltage of the drain electrode,
wherein the thin film transistor is configured such that acoustic waves are sensed by monitoring the voltage of the drain electrode while the thin film transistor is in active mode.
27. The device according to claim 2 , further comprising:
at least one additional thin film transistor formed on the substrate,
wherein each of the at least one additional thin film transistors comprises:
an excitation electrode;
a semiconductor thin film in contact with the excitation electrode;
an active region in the semiconductor thin film;
a gate region comprising a piezoelectric layer, wherein the gate region is in contact with the active region, wherein the gate region comprises a dielectric layer, wherein the dielectric layer is positioned between the semiconductor thin film and the piezoelectric layer;
a gate electrode, wherein the gate electrode is in electrical contact with the piezoelectric layer, wherein at least a portion of the piezoelectric layer is between the gate electrode and the semiconductor thin film, wherein the gate region and the gate electrode define a source region and drain region;
a source electrode, wherein the source electrode is in electrical contact with the source region; and
a drain electrode, wherein the drain electrode is in electrical contact the drain region.
28. The device according to claim 2 , further comprising a thin film transistor switch, wherein the thin film transistor switch drives the thin film transistor.
29. The device according to claim 2 ,
wherein the excitation electrode is positioned on the substrate,
wherein the semiconductor thin film is deposited on the substrate and over the excitation electrode,
wherein the gate region is on the active region.
30. The device according to claim 2 ,
wherein the gate electrode is positioned on the substrate, wherein the piezoelectric layer is deposited on the substrate and over the gate electrode, wherein the excitation electrode is on the active region.
31. The device according to claim 2 ,
wherein the excitation electrode is substantially parallel with the gate electrode.
32. The device according to claim 14 ,
wherein the gate region comprises a dielectric layer, wherein the dielectric layer is positioned between the semiconductor thin film and the piezoelectric layer.
33. The method according to claim 14 , further comprising:
providing at least one additional thin film transistor formed on the substrate,
wherein each of the at least one additional thin film transistors comprises:
an excitation electrode;
a semiconductor thin film in contact with the excitation electrode;
an active region in the semiconductor thin film;
a gate region comprising a piezoelectric layer, wherein the gate region is in contact with the active region;
a gate electrode, wherein the gate electrode is in electrical contact with the piezoelectric layer, wherein at least a portion of the piezoelectric layer is between the gate electrode and the semiconductor thin film, wherein the gate region and the gate electrode define a source region and drain region;
a source electrode, wherein the source electrode is in electrical contact with the source region; and
a drain electrode, wherein the drain electrode is in electrical contact the drain region; and
applying at least one excitation signal to the corresponding at least one additional excitation electrode of the at least one additional thin film transistor, while the at least one additional thin film transistor is in active mode, wherein applying the at least one additional excitation signal to the corresponding at least one additional excitation electrode of the at least one additional thin film transistor generates a corresponding at least one additional acoustic waves.
34. The method according to claim 14 , further comprising:
providing a thin film transistor switch, and
driving the thin film transistor with the thin film transistor switch.
35. The method according to claim 14 ,
wherein the excitation electrode is positioned on the substrate,
wherein the semiconductor thin film is deposited on the substrate and over the excitation electrode,
wherein the gate region is on the active region.
36. The method according to claim 14 ,
wherein the gate electrode is positioned on the substrate, wherein the piezoelectric layer is deposited on the substrate and over the gate electrode, wherein the excitation electrode is on the active region.
37. The method according to claim 14 ,
wherein the excitation electrode is substantially parallel with the gate electrode.