Bolometers utilize an organic semiconductor diode layer assembly for temperature measurement. These bolometers are particularly sensitive to the infrared wave range so that they are employable as infrared sensors and may be combined to form one-dimensional sensor rows or two-dimensional microbolometer arrays.
1. A bolometer with an organic semiconductor diode layer assembly for temperature measurement, comprising a reflective layer arranged at a given distance with respect to the semiconductor diode layer assembly,
wherein the organic semiconductor diode layer assembly comprises a layer sequence of a first contact layer, a p-conducting organic semiconductor layer, an n-conducting organic semiconductor layer as well as a second contact layer, and
wherein the second contact layer is connected to a first spacer and the first contact layer is connected to a second spacer, the two spacers supporting the organic semiconductor diode layer assembly above a substrate in a floating manner and being conductive in order to establish an electrical connection to an integrated circuit located within the substrate.
2. Bolometer of claim 1 , wherein the given distance is equal to a quarter of an infrared wavelength.
3. Bolometer of claim 1 , wherein the organic semiconductor diode layer assembly is absorbent of a wavelength of electromagnetic radiation and the given distance is equal to a quarter of this wavelength.
4. Bolometer of claim 1 , wherein the semiconductor diode layer assembly is suspended above a substrate in a floating manner by means of spacers.
5. Bolometer of claim 1 , wherein the organic semiconductor diode layer assembly comprises a nitride layer.
6. Bolometer of claim 1 , wherein the organic semiconductor diode layer assembly comprises doped organic semiconductor material.
7. Bolometer of claim 1 , wherein the organic semiconductor diode layer assembly comprises a Pt black layer.
8. Bolometer of claim 1 , wherein the organic semiconductor diode layer assembly comprises a layer sequence of
an n-doped electron transport layer, a hole barrier layer, an emission layer, an electron barrier layer as well as a p-doped hole transport layer.
9. Bolometer of claim 1 , wherein the first and/or the second contact layer bears on the p- and/or n-conducting organic semiconductor layer such that the p- and/or n-conducting organic semiconductor layer is contacted in a full-area manner or in tracks only.
10. A bolometer with an organic semiconductor diode layer assembly for temperature measurement, the organic semiconductor diode layer assembly comprising a layer sequence of a first contact layer, a p-conducting organic semiconductor layer, an n-conducting organic semiconductor layer as well as a second contact layer,
wherein the second contact layer is connected to a first spacer and the first contact layer is connected to a second spacer, the two spacers supporting the organic semiconductor diode layer assembly above a substrate in a floating manner and being conductive in order to establish an electrical connection to an integrated circuit located within the substrate, and the organic semiconductor layers being insulated from both spacers.
11. Bolometer of claim 10 , further comprising a reflective layer arranged at a given distance with respect to the semiconductor diode layer assembly.
12. Bolometer of claim 10 , wherein the given distance is equal to a quarter of an infrared wavelength.
13. Bolometer of claim 10 , wherein the organic semiconductor diode layer assembly is absorbent of a wavelength of electromagnetic radiation and the given distance is equal to a quarter of this wavelength.
14. Bolometer of claim 10 , wherein the semiconductor diode layer assembly is suspended above a substrate in a floating manner by means of spacers.
15. Bolometer of claim 10 , wherein the organic semiconductor diode layer assembly comprises a nitride layer.
16. Bolometer of claim 10 , wherein the organic semiconductor diode layer assembly comprises doped organic semiconductor material.
17. Bolometer of claim 10 , wherein the organic semiconductor diode layer assembly comprises a Pt black layer.
18. Bolometer of claim 10 , wherein the organic semiconductor diode layer assembly comprises a layer sequence of an n-doped electron transport layer, a hole barrier layer, an emission layer, an electron barrier layer as well as a p-doped hole transport layer.
19. Bolometer of claim 10 , wherein the first and/or the second contact layer bears on the p- and/or n-conducting organic semiconductor layer such that the p- and/or n-conducting organic semiconductor layer is contacted in a full-area manner or in tracks only.