Composition for forming lower layer film and pattern forming method
A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R 1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R 1 s may be the same or different and two or more Xs may be the same or different.
1. A composition for forming a lower layer film comprising a polymer(A), having a weight average molecular weight (Mw) of 500 to 8,000, and having a naphthalene derivative structural unit shown by the following formula (1),
wherein R1 represents a hydroxyl group, a substitutable alkyl group having 1 to 6 carbon atoms, a substitutable alkoxy group having 1 to 6 carbon atoms, a substitutable alkoxycarbonyl group having 2 to 10 carbon atoms, a substitutable aryl group having 6 to 14 carbon atoms, or a substitutable glycidyl ether group having 2 to 6 carbon atoms, n represents an integer from 0 to 6, X represents a methylene group, a substitutable alkylene group having 2 to 20 carbon atoms, a substitutable arylene group having 6 to 14 carbon atoms, or an alkylene ether group, and m represents an integer from 1 to 8, provided that two or more R1s may be the same or different when n is 2 to 6, two or more Xs may be the same or different when m is 2 to 8, and n +m is an integer from 1 to 8.
2. The composition for forming a lower layer film according to claim 1 , wherein R1 in the formula (1) has a structure shown by the following formula (2)
3. The composition for forming a lower layer film according to claim 2 , wherein X in the formula (1) has a structure shown by the following formula (3) and/or (4)
4. The composition for forming a lower layer film according to claim 3 , further comprising acid generating agent(C).
5. The composition for forming a lower layer film according to claim 3 , further comprising a cross-linking agent(D).
6. The composition for forming a lower layer film according to claim 3 , further comprising an additive(B) that prevents intermixing between the resist lower layer film and the resist film.
7. A pattern forming method comprising a step of forming a resist lower layer film by applying a composition for forming a lower layer film a polymer(A), having a weight average molecular weight (Mw) of 500 to 8,000, and having a naphthalene derivative structural unit shown by the following formula (1),
wherein R 1 represents a hydroxyl group, a substitutable alkyl group having 1 to 6 carbon atoms, a substitutable alkoxy group having 1 to 6 carbon atoms, a substitutable alkoxycarbonyl group having 2 to 10 carbon atoms, a substitutable aryl group having 6 to 14 carbon atoms, or a substitutable glycidyl ether group having 2 to 6 carbon atoms, n represents an integer from 0 to 6, X represents a methylene group, a substitutable alkylene group having 2 to 20 carbon atoms, a substitutable arylene group having 6 to 14 carbon atoms, or an alkylene ether group, and m represents an integer from 1 to 8, provided that two or more R 1 s may be the same or different when n is 2 to 6, two or more Xs may be the same or different when m is 2 to 8, and n +m is an integer from 1 to 8 to a substrate and curing the resulting coating film, a step of forming a resist film by applying a solution of a resist composition to the resist lower layer film and prebaking the resulting coating film, a step of selectively exposing the resist film through a photomask, a step of developing the exposed resist film, and a step of etching the resist lower layer film and the substrate.
8. The pattern forming method according to claim 7 , wherein R1 in the formula (1) has a structure shown by the following formula (2)
9. The pattern forming method according to claim 7 , wherein X in the formula (1) has a structure shown by the following formula (3) and/or (4)
10. The pattern forming method according to claim 7 , wherein the composition further comprises an acid generating agent(C).
11. The pattern forming method according to claim 7 , wherein the composition further comprising a cross-linking agent(D).
12. The pattern forming method according to claim 7 , wherein the composition further comprises an additive(B) that prevents intermixing between the resist lower layer film and the resist film.