Lateral two-terminal nanotube devices and method for their formation
An apparatus, system, and method are provided for a lateral two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The lateral nanotube device can include a substrate, an anodic oxide material disposed on the substrate, and a column disposed in the anodic oxide material extending from one distal end of the anodic oxide material to another end of the anodic oxide material. The lateral nanotube device further can include a first material disposed within the column, and a second material disposed within the column. The first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column. The second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.
1. A lateral nanotube device, comprising:
a substrate;
an anodic oxide material disposed on the substrate;
a column disposed in the anodic oxide material, wherein a length of the column is parallel to the substrate, extending from one distal end of the anodic oxide material to another end of the anodic oxide material;
a first material disposed within the column; and
a second material disposed within the column,
wherein the first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column, and
wherein the second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.
2. The lateral nanotube device of claim 1 , wherein the first material is exposed at the distal end of the column, and wherein the second material is exposed at the another distal end of the column.
3. The lateral nanotube device of claim 1 , wherein the first material and the second material are concentrically disposed within the column.
4. The lateral nanotube device of claim 1 , wherein one of the first material and the second material comprises an electron donating material, and wherein the other of the first material and the second material comprises an electron accepting material.
5. The lateral nanotube device of claim 1 , wherein the first material and the second material overlap at least 25% of a length of the column.
6. The lateral nanotube device of claim 1 , further comprising:
a first wiring structure operatively connected to an exposed end of the first material; and
a second wiring structure operatively connected to an exposed end of the second material.
7. The lateral nanotube device of claim 1 , wherein the column comprises at least one of a diameter, a width, or a thickness in a range of 5-3000 nm.
8. The lateral nanotube device of claim 1 , wherein the anodic oxide material is selected from the group consisting of aluminum oxide, titanium oxide, silicon, or a dielectric material.
9. The lateral nanotube device of claim 1 , wherein the lateral nanotube device comprises one of a solar cell, a light emitting diode, or a laser.
10. The lateral nanotube device of claim 1 , wherein the lateral nanotube device comprises a diode.
11. The lateral nanotube device of claim 1 , wherein the substrate is rigid or flexible.
12. The lateral nanotube device of claim 1 , further comprising:
a conductive layer disposed on an outer surface of the first material.
13. The lateral nanotube device of claim 1 , further comprising:
a conductive layer disposed within the second material.
14. The lateral nanotube device of claim 1 , further comprising:
a first conductive layer disposed on an outer surface of the first material; and
a second conductive layer disposed within the second material.
15. The lateral nanotube device of claim 14 , wherein the first conductive layer and the second conductive layer each comprise a material selected from the group consisting of a metal, wherein the metal comprises at least one of aluminum, copper, titanium, or a conducting compound, wherein the conducting compound comprises indium-tin-oxide.
16. The lateral nanotube device of claim 1 , wherein one of the first material and the second material comprises an n-type semiconductor material, and wherein the other of the first material and the second material comprises a p-type semiconductor material.
17. The lateral nanotube device of claim 1 , wherein the anodic oxide material comprises a rectangular patterned area disposed on the substrate.
18. The lateral nanotube device of claim 1 , wherein a thickness of the anodic oxide material is in a range of 25 nm to 1 millimeter.
19. A lateral nanotube device, comprising:
a substrate;
an anodic oxide material disposed on the substrate;
a plurality of columns, each column disposed in the anodic oxide material wherein a length of the columns is parallel to the substrate, extending from a distal end of the anodic oxide material to another distal end of the anodic oxide material;
a first material disposed within each column; and
a second material disposed within each column,
wherein the first material fills a distal end of each column and gradiently decreases towards another distal end of each column along inner walls of each column, and
wherein the second material fills the another distal end of each column and gradiently decreases towards the distal end of each column within the first material.
20. A lateral nanotube device, comprising:
a substrate;
an anodic oxide material disposed on the substrate;
a column disposed in the anodic oxide material, wherein a length of the column is parallel to the substrate, extending from one distal end of the anodic oxide material to another end of the anodic oxide material;
a first material disposed within the column;
a second material disposed within the column; and
a third material disposed between the first material and the second material,
wherein the first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column, and
wherein the second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.
21. The lateral nanotube device of claim 20 , wherein the third material comprises an electrical insulator.
22. The lateral nanotube device of claim 20 , wherein the lateral nanotube device comprises an electrostatic capacitor.
23. The lateral nanotube device of claim 20 , wherein the lateral nanotube device comprises one of an electrostatic capacitor, a battery, or a supercapacitor.
24. The lateral nanotube device of claim 20 , wherein the first material and the second material are electrically conducting.
25. A system, comprising:
a plurality of lateral nanotube devices configured one on top of each other,
wherein each lateral nanotube device comprises:
a substrate;
an anodic oxide material disposed on the substrate;
a column disposed in the anodic oxide material, wherein a length of the column is parallel to the substrate, extending from one distal end of the anodic oxide material to another end of the anodic oxide material;
a first material disposed within the column; and
a second material disposed within the column;
wherein the first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column, and
wherein the second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.
26. A system, comprising:
a plurality of lateral nanotube devices configured one on top of each other,
wherein each lateral nanotube device comprises:
a substrate;
an anodic oxide material disposed on the substrate;
a column disposed in the anodic oxide material, wherein a length of the column is parallel to the substrate, extending from one distal end of the anodic oxide material to another end of the anodic oxide material;
a first material disposed within the column;
a second material disposed within the column; and
a third material disposed between the first material and the second material,
wherein the first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column, and
wherein the second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.
27. The system of claim 25 , wherein the plurality of lateral nanotube devices are wired in parallel.
28. The system of claim 25 , wherein at least two of the lateral nanotube devices comprises a different material set for the second material and the third material within the column.