IP Library Granted Patent US 8,102,046
Granted Patent B2
US 8,102,046 · App. 12/285,743 · Granted Jan 24, 2012

Semiconductor device and method of manufacturing the same

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Quick Facts
Patent No.
US 8,102,046
App. No.
12/285,743
Granted
Jan 24, 2012
Kind
B2
Abstract

Through heat discharge only by wiring connected to a conventional semiconductor chip, sufficient heat discharge performance may not be achieved in a recent semiconductor device. A semiconductor device according to an aspect of the present invention includes: a flexible substrate including a first main surface and a second main surface; a semiconductor chip; a first heat conductive layer formed on the first main surface of the flexible substrate and electrically connected to the semiconductor chip; and a second heat conductive layer formed on the second main surface of the flexible substrate and electrically insulated from the semiconductor chip.

Claims (17)

1. A semiconductor device, comprising:

a flexible tape substrate including a first main surface and a second main surface;

a semiconductor chip;

a first heat conductive layer formed on the first main surface of the flexible tape substrate and electrically connected to the semiconductor chip; and

a second heat conductive layer which comprises a plurality of divided conductive stripe patterns formed on the second main surface of the flexible tape substrate and electrically insulated from the semiconductor chip,

wherein the second heat conductive layer is formed on the second main surface of the flexible tape substrate excluding a portion just underlying an entire region where the semiconductor chip is mounted on the first main surface of the flexible tape substrate in a plan view of the device.

2. The semiconductor device according to claim 1 , wherein the semiconductor chip is formed into a rectangular shape including a long side portion and a short side portion, and

wherein each of the plurality of divided conductive stripe patterns is provided along a direction of the long side portion.

3. The semiconductor device according to claim 1 , further comprising a first solder resist formed on an outer surface of the second heat conductive layer.

4. The semiconductor device according to claim 3 , further comprising a second solder resist formed on an outer surface of the first heat conductive layer.

5. A semiconductor device, comprising:

a flexible tape substrate including a first main surface and a second main surface;

a plurality of semiconductor chips arranged on the flexible substrate in a row;

a first heat conductive layer formed on the first main surface of the flexible substrate and electrically connected to the plurality of semiconductor chips; and

a second heat conductive layer which comprises a plurality of divided conductive stripe patterns formed on the second main surface of the flexible tape substrate and electrically insulated from the plurality of semiconductor chips,

wherein each of the plurality of divided conductive stripe patterns is provided along a row direction of the plurality of semiconductor chips, and

wherein the second heat conductive layer is formed on the second main surface of the flexible tape substrate excluding a portion just underlying an entire region where the semiconductor chip is mounted on the first main surface of the flexible tape substrate in a plan view of the device.

Assignments (3)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Oct 28, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025214/0175 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 14, 2008
From: IWATA, YASUAKI; SASAKI, CHIHIRO
To: NEC ELECTRONICS CORPORATION
Reel/Frame 021740/0180 →