E/P durability by using a sub-range of a full programming range

1. A NAND flash memory system, comprising:

a controller configured to:

determine whether to change a value of a voltage threshold based at least in part on whether an erase operation is unsuccessful, wherein:

the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip;

the portion includes a plurality of sub-portions; and

in the event the erase operation is unsuccessful for two or more of the plurality of sub-portions, it is determined to change the value of the voltage threshold; and

in the event it is determined to change the value of the voltage threshold:

change the value of the voltage threshold; and

store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip; and

the NAND flash memory chip.

2. The system of claim 1 , wherein the NAND flash memory system includes a single-level cell (SLC) device.

3. The system of claim 1 , wherein the NAND flash memory system includes a multi-level cell (MLC) device.

4. The system of claim 1 , wherein the portion of the NAND flash memory chip includes a block.

5. The system of claim 1 , wherein there is a second voltage threshold that corresponds to a second portion of the NAND flash memory chip.

6. The system of claim 1 , wherein there is a second voltage threshold that corresponds to a second portion of a second NAND flash memory chip.

7. The system of claim 1 , wherein the identifier includes an address or location.

8. The system of claim 1 , wherein the NAND flash memory chip is one of a plurality of NAND flash memory chips and the identifier includes an address or location associated with said one of the plurality of NAND flash memory chips.

9. The system of claim 1 , wherein the erase operation is determined to be unsuccessful after a plurality of erase-test cycles have been performed.

10. The system of claim 1 , wherein the number of sub-portions required to be unsuccessfully erased in order for it to be determined to change the value of the voltage threshold is based at least in part on a number of inoperable sub-portions that is able to be tolerated while remaining operable.

11. The system of claim 1 , wherein the controller is configured to change the value of the voltage threshold by:

measuring a plurality of post-erasure voltages for the sub-portions which were unsuccessfully erased; and

determining a new value to change the voltage threshold to based at least in part on the largest of the plurality of post-erasure voltages.

12. A NAND flash memory system, comprising:

a controller configured to:

determine whether to change a value of a voltage threshold based at least in part on whether an erase operation is desired, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined to change the value of the voltage threshold:

change the value of the voltage threshold; and

store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip; and

the NAND flash memory chip.

13. The system of claim 12 , wherein a plurality of erase operations is desired and for the plurality of desired erase operations, one erase operation is performed.

14. A NAND flash memory system, comprising:

a controller configured to:

determine whether to change a value of a voltage threshold based at least in part on whether a noise parameter exceeds a threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined to change the value of the voltage threshold:

change the value of the voltage threshold; and

store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip; and

the NAND flash memory chip.

15. A NAND flash memory system, comprising:

a controller configured to:

determine whether to change a value of a voltage threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined to change the value of the voltage threshold:

change the value of the voltage threshold, including by increasing the voltage threshold; and

store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip; and

the NAND flash memory chip.

16. A NAND flash memory system, comprising:

a controller configured to:

determine whether to change a value of a voltage threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined to change the value of the voltage threshold:

change the value of the voltage threshold, including by changing the value of the voltage threshold to a pre-determined value; and

store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip; and

the NAND flash memory chip.

17. A NAND flash memory system, comprising:

a controller configured to:

determine whether to change a value of a voltage threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined to change the value of the voltage threshold:

change the value of the voltage threshold, including by:

measuring a voltage; and

determining a new value to change the voltage threshold to based at least in part on the measured voltage; and

store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip; and

the NAND flash memory chip.

18. A method for controlling a NAND flash memory system, comprising:

using a processor to determine whether to change a value of a voltage threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined by the processor to change the value of the voltage threshold:

changing the value of the voltage threshold, including by changing the value of the voltage threshold to a pre-determined value; and

using the processor to store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip.

19. A computer program product for controlling a NAND flash memory system, the computer program product being embodied in a non-transitory computer readable storage medium and comprising computer instructions for:

determining whether to change a value of a voltage threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined to change the value of the voltage threshold:

changing the value of the voltage threshold, including by changing the value of the voltage threshold to a pre-determined value; and

storing the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip.

20. A method for controlling a NAND flash memory system, comprising:

using a processor to determine whether to change a value of a voltage threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined by the processor to change the value of the voltage threshold:

changing the value of the voltage threshold, including by:

measuring a voltage; and

determining a new value to change the voltage threshold to based at least in part on the measured voltage; and

using the processor to store the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip.

21. A computer program product for controlling a NAND flash memory system, the computer program product being embodied in a non-transitory computer readable storage medium and comprising computer instructions for:

determining whether to change a value of a voltage threshold, wherein the voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip; and

in the event it is determined to change the value of the voltage threshold:

changing the value of the voltage threshold, including by:

measuring a voltage; and

determining a new value to change the voltage threshold to based at least in part on the measured voltage; and

storing the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip.