Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH 4 ) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.
1. A method of fabricating an electronic structure comprising:
providing a copper-containing body;
exposing the copper-containing body to a silicon-containing entity in a non-plasma operation, to provide a layer of silicon-copper bonding in a resulting copper-containing body; and
forming a silicon nitride layer in contact with the resulting copper-containing body.
2. The method of claim 1 wherein the step of exposing the copper-containing body to a silicon-containing entity in a non-plasma operation comprises exposing the copper-containing body to silane.
3. The method of claim 1 wherein the copper-containing body is in electrical connection with the control gate of a transistor.
4. The method of claim 1 wherein the copper-containing body is in electrical connection with a source/drain of a transistor.
5. The method of claim 1 wherein the silicon nitride layer is formed in contact with the resulting copper-containing body by exposing the resulting copper-containing body to silane and ammonia in a plasma operation.
6. The method of claim 1 , wherein providing silicon-copper bonding in a resulting copper-containing body comprises the formation of copper silicide layers on the copper-containing body.
7. The method of claim 5 wherein the silicon nitride layer is formed in contact with the resulting copper-containing body by exposing the resulting copper-containing body to silane, ammonia, and nitrogen in a plasma operation.
8. The method of claim 1 , wherein the silicon nitride layer is formed in contact with copper silicide layers on the copper-containing body.