IP Library Granted Patent US 7,858,558
Granted Patent B2
US 7,858,558 · App. 12/299,141 · Granted Dec 28, 2010

Superconducting thin film material and method of manufacturing the same

Assignees: Sumitomo Electric Industries, Ltd.; International Superconductivity Technology Center, the Juridical Foundation
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Quick Facts
Patent No.
US 7,858,558
App. No.
12/299,141
Granted
Dec 28, 2010
Kind
B2
Abstract

A superconducting thin film material that can realize attainment of an excellent property such as a high J C and a high I C and reduction of costs at the same time includes an orientated metal substrate and an oxide superconductor film formed on the orientated metal substrate. The oxide superconductor film includes a physical vapor deposition HoBCO layer formed by a physical vapor deposition method, and a metal organic deposition HoBCO layer formed on the physical vapor deposition HoBCO layer by a metal organic deposition method.

Claims (23)

1. A superconducting thin film material, comprising:

a substrate; and

a superconductor film formed on said substrate,

said superconductor film including

a physical vapor deposition layer formed by a physical vapor deposition method, and

a metal organic deposition layer formed on said physical vapor deposition layer by a metal organic deposition method, wherein

a plurality of structures made up of a combination of said physical vapor deposition layer and said metal organic deposition layer are stacked in said superconductor film.

2. The superconducting thin film material according to claim 1 , further comprising an intermediate layer between said substrate and said superconductor film.

3. The superconducting thin film material according to claim 1 , wherein

said superconductor film is formed on each of both main surfaces of said substrate.

4. A method of manufacturing a superconducting thin film material, comprising:

a substrate preparation step for preparing a substrate; and

a superconductor film formation step for forming a superconductor film on said substrate,

said superconductor film formation step including

a physical vapor deposition step for forming a physical vapor deposition layer by a physical vapor deposition method, and

a metal organic deposition step for forming a metal organic deposition layer on said physical vapor deposition layer by a metal organic deposition method,

wherein the physical vapor deposition step and the metal organic deposition step are alternately performed more than once.

5. The superconducting thin film material according to claim 1 , wherein

said metal organic deposition layer has a thickness of not more than 1 μm.

6. The superconducting thin film material according to claim 1 , wherein

said physical vapor deposition layer has a thickness of not more than 2 μm.

7. The superconducting thin film material according to claim 1 , wherein

said metal organic deposition method is a non-fluorine-containing metal organic deposition method without using a fluorine-containing organometallic salt solution.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2016
From: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 038896/0940 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2008
From: HAHAKURA, SHUJI; OHMATSU, KAZUYA; UEYAMA, MUNETSUGU; HASEGAWA, KATSUYA
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.; INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
Reel/Frame 021767/0842 →
Priority Claims (1)
JP 2006-140172 · May 19, 2006 · national
Continuity (1)
Related Publication 20090137400A1 · May 28, 2009