Cu-Mn Alloy Sputtering Target and Semiconductor Wiring
Proposed is a Cu—Mn alloy sputtering target, wherein the Mn content is 0.05 to 20 wt %, the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 500 wtppm or less, and the remainder is Cu and unavoidable impurities. Specifically, provided are a copper alloy wiring for semiconductor application, a sputtering target for forming this wiring, and a manufacturing method of a copper alloy wiring for semiconductor application. The copper alloy wiring itself for semiconductor application is equipped with a self-diffusion suppression function for effectively preventing the contamination around the wiring caused by the diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling and facilitating the arbitrary formation of a barrier layer, and simplifying the deposition process of the copper alloy wiring for semiconductor application.
1 . A Cu—Mn alloy sputtering target, wherein the Mn content is 0.05 to 20 wt %, the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 500 wtppm or less, and the remainder is Cu and unavoidable impurities.
2 . The Cu—Mn alloy sputtering target according to claim 1 , wherein the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 50 wtppm or less.
3 . The Cu—Mn alloy sputtering target according to claim 1 , wherein the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 10 wtppm or less.
4 . The Cu—Mn alloy sputtering target according to claim 3 , wherein, when the specific surface area of a target surface in a case where a close-packed (111) face measured with EBSP is evenly distributed in all directions is 1, the specific surface area of the (111) face of the target surface is 4 or less.
5 . The Cu—Mn alloy sputtering target according to claim 4 , wherein the oxygen content is 100 wtppm or less.
6 . The Cu—Mn alloy sputtering target according to claim 4 , wherein the oxygen content is 50 wtppm or less.
7 . A Cu—Mn alloy semiconductor wiring, wherein the Mn content is 0.05 to 20 wt %, the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 500 wtppm or less, and the remainder is Cu and unavoidable impurities.
8 . The Cu—Mn alloy semiconductor wiring according to claim 7 , wherein the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 50 wtppm or less.
9 . The Cu—Mn alloy semiconductor wiring according to claim 7 , wherein the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 10 wtppm or less.
10 . The Cu—Mn alloy semiconductor wiring according to claim 9 , wherein the Cu—Mn alloy semiconductor wiring is a wiring material He formed in a concave portion of a contact hole or a wiring groove.
11 . The Cu—Mn alloy semiconductor wiring according to 7 , wherein the Cu—Mn alloy semiconductor wiring is a wiring material formed in a concave portion of a contact hole or a wiring groove.
12 . The Cu—Mn alloy sputtering target according to claim 1 , wherein, when the specific surface area of a target surface in a case where a close-packed (111) face measured with EBSP is evenly distributed in all directions is 1, the specific surface area of the (111) face of the target surface is 4 or less.
13 . The Cu—Mn alloy sputtering target according to claim 1 , wherein the oxygen content is 100 wtppm or less.
14 . The Cu—Mn alloy sputtering target according to claim 1 , wherein the oxygen content is 50 wtppm or less.