Indenofluorene polymer based organic semiconductor materials

1. Polymer comprising >0 mol % and <40 mol % of one or more identical or different units comprising an indenofluorene group of formula I

wherein

one of A and A′ is a single bond and the other is CR 1 R 2 ,

one of B and B′ is a single bond and the other is CR 3 R 4 ,

R 1-4 are independently of each other identical or different groups selected from H, halogen, —CN, —NC, —NCO, —NCS, —OCN, —SCN, —C(═O)NR 0 R 00 , —C(═O)X, —C(═O)R 0 , —NH 2 , —NR 0 R 00 , —SH, —SR 0 , —SO 3 H, —SO 2 R 0 , —OH, —NO 2 , —CF 3 , —SF 5 , optionally substituted silyl, or a straight-chain, branched or cyclic alkyl with 1 to 40 C-atoms, which is unsubstituted, mono- or polysubstituted by F, Cl, Br, I or CN, and wherein one or more non-adjacent CH 2 groups are optionally replaced, in each case independently from one another, by —O—, —S—, —NH—, —NR 0 —, —SiR 0 R 00 —, —CO—, —COO—, —OCO—, —O—CO—O—, —S—CO—, —CO—S—, —SO 2 —, —CO—NR 0 —, —NR 0 —CO—, —NR 0 —CO—NR 00 —, —CX 1 ═CX 2 — or —C≡C— in such a manner that O and/or S atoms are not linked directly to one another, with R 0 and R 00 having one of the meanings given as described below and X 1 and X 2 being independently of each other H, F, Cl or CN,

X is halogen,

R 0 and R 00 are independently of each other H or an optionally substituted carbyl or hydrocarbyl group optionally comprising one or more hetero atoms,

Ar is a single bond or denotes mononuclear or polynuclear aryl or heterorayl that is optionally substituted,

m is an integer ≧1, and

wherein optionally the groups R 1 and R 2 and/or the groups R 3 and R 4 form a spiro group with the adjacent fluorene moiety,

with the proviso that the following polymers are excluded

2. Polymer according to claim 1 , characterized in that the units of formula I are selected from the following subformulae

wherein R 1-4 are as defined in claim 1 , R and R 5-8 independently of each other have one of the meanings of R 1 given in claim 1 , r is 0, 1, 2, 3 or 4, t is 0, 1 or 2 and u is 0, 1, 2 or 3.

3. Polymer according to claim 1 or 2 , characterized in that it consists of two different types of units, one of which is selected of formula I and the other is selected of units having hole or electron transporting properties.

4. Polymer according to claim 3 , characterized in that the additional units are selected of formula II

wherein

Y is N, P, P═O, PF 2 , P═S, As, As═O, As═S, Sb, Sb═O or Sb═S,

Ar 1 which may be the same or different, denote, independently if in different repeat units, a single bond or an optionally substituted mononuclear or polynuclear aryl group,

Ar 2 which may be the same or different, denote, independently if in different repeat units, an optionally substituted mononuclear or polynuclear aryl group,

Ar 3 which may be the same or different, denote, independently if in different repeat units, an optionally substituted mononuclear or polynuclear aryl group, which may be optionally substituted by a bridging group linking different chain residues of formula III, and

m is 1, 2 or 3.

5. Polymer according to claim 3 , characterized in that the additional units are selected from the following formulae

wherein R and R′ have one of the meanings of R 1 .

6. Polymer according to claim 4 , characterized in that it is of the following formula

wherein

A is a unit of formula I,

B is a unit selected from formulae II,

x is >0 and <0.5,

y is >0.5 and <1,

x+y is 1,

n is an integer >1.

7. Polymer according to claim 1 , characterized in that it is selected from the following formulae

wherein R 1-4 are as defined in claim 1 , R and R′ independently of each other have one of the meanings of R 1 , r is 0, 1, 2, 3 or 4, s is 0, 1, 2, 3, 4 or 5, x is >0 and <0.5, y is >0.5 and <1, provided that x+y is 1, and n is an integer >1.

8. Organic semiconductor layer or component comprising a polymer according to claim 1 .

9. Electronic or electrooptical device comprising a polymer according to claim 1 .

10. Electronic or electrooptical device according to claim 9 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

11. Process for preparing a polymer according to claim 3 , which comprises coupling one or more monomers based on a unit of formula I with one or more monomers based on a unit having hole or electron transporting properties, and optionally with further units, in a polymerisation reaction.

12. Polymer according to claim 5 , characterized in that it is of the following formula

wherein

A is a unit of formula I,

B is a unit selected from formulae III-IX,

x is >0 and <0.5,

y is >0.5 and <1,

x+y is 1,

n is an integer >1.

13. Organic semiconductor layer or component comprising a polymer according to claim 2 .

14. Organic semiconductor layer or component comprising a polymer according to claim 3 .

15. Organic semiconductor layer or component comprising a polymer according to claim 4 .

16. Organic semiconductor layer or component comprising a polymer according to claim 5 .

17. Organic semiconductor layer or component comprising a polymer according to claim 6 .

18. Organic semiconductor layer or component comprising a polymer according to claim 7 .

19. Electronic or electrooptical device comprising a polymer according to claim 2 .

20. Electronic or electrooptical device comprising a polymer according to claim 3 .

21. Electronic or electrooptical device comprising a polymer according to claim 4 .

22. Electronic or electrooptical device comprising a polymer according to claim 5 .

23. Electronic or electrooptical device comprising a polymer according to claim 6 .

24. Electronic or electrooptical device comprising a polymer according to claim 7 .

25. Electronic or electrooptical device comprising a layer or component according to claim 8 .

26. Electronic or electrooptical device according to claim 19 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

27. Electronic or electrooptical device according to claim 20 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

28. Electronic or electrooptical device according to claim 21 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

29. Electronic or electrooptical device according to claim 22 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

30. Electronic or electrooptical device according to claim 23 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

31. Electronic or electrooptical device according to claim 24 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

32. Electronic or electrooptical device according to claim 25 , which is an organic field effect transistor (OFET), thin film transistor (TFT), integrated circuit (IC), radio frequency identification (RFID) tag, photodetector, sensor, logic circuit, memory element, capacitor, organic photovoltaic (OPV) cell, charge injection layer, charge transport layer or interlayer in polymer light emitting diodes (PLEDs), Schottky diode, planarising layer, antistatic film, polymer electrolyte membrane (PEM), conducting substrate or pattern, photoconductor, electrophotographic element or organic light emitting diode (OLED).

33. Process for preparing a polymer according to claim 4 , which comprises coupling one or more monomers based on a unit of formula I with one or more monomers based on a unit of formula II, and optionally with further units, in a polymerisation reaction.

34. Process for preparing a polymer according to claim 5 , which comprises coupling one or more monomers based on a unit of formula I with one or more monomers based on a unit of one of formulae III-IX, and optionally with further units, in a polymerisation reaction.

35. Process for preparing a polymer according to claim 3 , which comprises coupling one or more monomers based on a unit of one of formulae I1 to I12 with one or more monomers based on a unit having hole or electron transporting properties, and optionally with further units, in a polymerisation reaction.

36. Process for preparing a polymer according to claim 4 , which comprises coupling one or more monomers based on a unit of one of formulae I1 to I12 with one or more monomers based on a unit of formula II, and optionally with further units, in a polymerisation reaction.

37. Process for preparing a polymer according to claim 5 , which comprises coupling one or more monomers based on a unit of one of formulae I1 to I12 with one or more monomers based on a unit of one of formulae III-IX, and optionally with further units, in a polymerisation reaction.

38. Polymer according to claim 1 , which comprises less than 40 mol % of units comprising the indenofluorene group of formula I.

39. Polymer according to claim 1 , which comprises less than 30 mol % of units comprising the indenofluorene group of formula I.

40. Polymer according to claim 1 , which comprise more than 5 mol % and less than 40 mol % of units comprising the indenofluorene group of formula I.