Method for producing silicon carbide single crystal
View Patent ↗A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.
1. A method for the production of an SiC single crystal, comprising the steps of:
growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal;
disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal;
using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section;
disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal;
using the third seed crystal to grow thereon a third SiC single crystal; and
cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal.
2. A method for the production of an SiC single crystal according to claim 1 , wherein the first SiC single crystal is grown on the first seed crystal in a thickness greater than a diameter of a surface of the first seed crystal.
3. A method for the production of an SiC single crystal according to claim 1 , wherein the direction parallel or oblique to the first or second direction of growth has an angle of 0° or more and less than 90° from the first or second direction of growth.
4. A method for the production of an SiC single crystal according to claim 1 , wherein the third SiC single crystal grown has a thickness greater than a length of a major axis of a surface of the third seed crystal.
5. A method for the production of an SiC single crystal according to claim 1 , wherein the seed crystal is obtained by any of the steps of growing in the method of claim 1 .
6. A method for the production of an SiC single crystal according to claim 1 , wherein the SiC single crystal is grown by having a temperature of a crystal-growing part of the seed crystal set in a range of 1800° C. to 2300° C. and a temperature of a raw material of SiC single crystal set in a range of 2000° C. to 2400° C. and at a level higher than the temperature of the crystal-growing part.