Rotatable sputter target
The invention relates to a rotatable sputter target and to a method to manufacture such a sputter target. The sputter target comprises a target material and a magnet array located at the interior of the target material. The magnet array defines a central zone extending along the major part of the length of the target material and defines an end zone at each end of the central zone. The target material comprises a first material and a second material. The target material comprises the first material at least on the central zone and comprises the second material at least on the end zones. The second material has a lower sputter deposition rate than the first material. The second material is preferably applied by thermal spraying. The first material comprises a first element and the second material comprises a compound of the first element of the first material.
1. A rotatable sputter target comprising a target material and a magnet array located at the interior of said target material, said magnet array defining a central zone extending along the major part of the length of said target material and defining end zones at each end of said central zone, said target material comprising a first material and a second material, said second material having a lower sputter deposition rate than said first material, said target material comprising said first material at least at said central zone and said second material at least at said end zones, wherein said first material comprises a first element and said second material comprises a compound of said first element of said first material.
2. A rotatable target according to claim 1 , whereby said first material is applied on said central zone and on said end zones and said second material is applied at least on said end zones on top of said first material.
3. A sputter target according to claim 1 , whereby the coating sputter deposited from said first material and from said second material have substantially the same composition.
4. A sputter target according to claim 1 , whereby said first element of said first material comprises a metal.
5. A sputter target according to claim 4 , whereby said metal is selected from the group consisting of Zn, Sn, Ag, Cu, Nd, Ni, Zr, Fe, Al, Si, Ti, Nb, Ta, Cr, Mo and W.
6. A sputter target according to claim 1 , whereby said second material consists of said first element of said first material.
7. A sputter target according to claim 1 , whereby said second material comprises an alloy of said first element of said first material.
8. A sputter target according to claim 1 , whereby said second material comprises a chemical compound of said first element of said first material.
9. A sputter target according to claim 1 , whereby said second material comprises said first element of said first material doped with at least one element other than said first element or comprises a compound of said first element of said first material doped with at least one element other than said first element.
10. A sputter target according to claim 1 , whereby said sputter target is used in a reactive sputter process using a reactive gas.
11. A sputter target according to claim 1 , whereby said first material comprises a metal and said second material comprises a chemical compound of said metal and of reactive gas.
12. A sputter target according to claim 1 , whereby said target material is self-supporting.
13. A sputter target according to claim 1 , whereby said target material is deposited on a target base.
14. A sputter target according to claim 1 , whereby said first material and said second material is obtained by casting, extrusion, sintering, hipping or spraying.
15. A sputter target according to claim 1 , whereby said second material is obtained by thermal spraying.
16. A sputter target according to claim 1 , whereby a diffusion layer is created between said first and said second material.
17. A sputter target according to claim 1 , whereby said target material has a uniform thickness over its whole length.
18. A sputter target according to claim 1 , whereby said target material has a dog-bone structure whereby the thickness of said target material is thicker at said end zones.
19. A method to manufacture a sputter target as defined in claim 1 , said method comprising the steps of
providing a target material comprising a first and a second material, said second material having a lower sputter deposition rate than said first material; and
providing a magnet array being located at the interior of said target material, said magnet array defining a central zone extending along the major part of the length of said target material and defining end zones at each end of said central zone;
said target material comprising said first material at least on said central zone and comprising said second material at least on said end zones, wherein said first material comprises a first element and said second material comprises a compound of said first element.
20. A method according to claim 19 , whereby said first material is applied on said central zone and on said end zones and said second material is applied at least on said end zones on top of said first material.
21. A method according to claim 19 , whereby said element of said first material comprises a metal.
22. A method according to claim 21 , whereby said metal is selected from the group consisting of Zn, Sn, Ag, Cu, Nd, Ni, Zr, Fe, Al, Si, Ti, Nb, Ta, Cr, Mo and W.
23. A method according to claim 19 , whereby said second material consists of said first element of said first material.
24. A method according to claim 19 , whereby said second material comprises an alloy of said first element of said first material.
25. A method according to claim 19 , whereby said second material comprises a chemical compound of said first element of said first material.
26. A method according to claims 19 , whereby said second material comprises said first element of said first material doped with at least one element other than said first element or comprises a compound of said first element of said first material doped with at least one element other than said first element.
27. A method according to claim 19 , whereby said sputter target is used in a reactive sputter process using a reactive gas.
28. A method according to claim 19 , whereby said first material comprises a metal and said second material comprises a chemical compound of said metal and of reactive gas.
29. A method according to claim 19 , whereby said target material is self-supporting.
30. A method according to claim 19 , whereby said target material is deposited on a target base.
31. A method according to claim 19 , whereby said first material and said second material are obtained by casting, extrusion, sintering, hipping or spraying.
32. A method according to claim 19 , whereby said second material is obtained by thermal spraying.
33. A method according to claim 19 , whereby a diffusion layer is between said first and said second material.
34. A method according to claim 19 , whereby said target material has a uniform thickness over its whole length.
35. A method according to claim 19 , whereby said target material has a dog-bone structure whereby the thickness of said target material is thicker at said end zones.